Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test

S. Song*, S. Munk-Nielsen, C. Uhrenfeldt

*Corresponding author

Research output: Contribution to journalConference article in JournalResearchpeer-review

5 Citations (Scopus)
Original languageEnglish
JournalMicroelectronics Reliability
Volume76-77
Pages (from-to)539-543
ISSN0026-2714
DOIs
Publication statusPublished - Sep 2017
Event28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, France
Duration: 25 Sep 201728 Sep 2017

Conference

Conference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
CountryFrance
CityBordeaux
Period25/09/201728/09/2017

Keywords

  • Failure analysis
  • Failure mechanism
  • Gallium nitride
  • GaN-on-Si
  • Leakage current
  • Power cycling
  • Power device
  • Reliability

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