Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test

S. Song*, S. Munk-Nielsen, C. Uhrenfeldt

*Corresponding author for this work

Research output: Contribution to journalConference article in JournalResearchpeer-review

13 Citations (Scopus)

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