Full-Bridge T-type Isolated DC/DC Converter with Wide Input Voltage Range

Dong Liu, Yanbo Wang, Fujin Deng, Zhe Chen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)
112 Downloads (Pure)

Abstract

The advent of the silicon carbide (SiC) power device with high voltage stress would simplify the power applications since two-level topologies would be possible to instead three-level (TL) based topologies. This paper proposes a full-bridge (FB) T-type isolated DC/DC converter composed of four main power switches with high voltage stress (SiC MOSFET) and four auxiliary power switches with low voltage stress (Si MOSFET). Therefore, comparing with the conventional diode-clamped FB TL isolated DC/DC converter, the proposed converter has fewer circuit components and simpler circuit structure. What is more, a corresponding control strategy is proposed, which can not only realize zero-voltage switching (ZVS) but also achieve wide input voltage range. Finally, simulation and experimental results are both presented for verification.
Original languageEnglish
Title of host publicationProceedings of IPEC 2018 ECCE Asia
Number of pages6
PublisherIEEE
Publication dateMay 2018
Pages2708-2713
ISBN (Print)978-1-5386-4190-3
ISBN (Electronic)978-4-88686-405-5
DOIs
Publication statusPublished - May 2018
EventThe 2018 International Power Electronics Conference
- Niigata, Japan
Duration: 20 May 201824 May 2018

Conference

ConferenceThe 2018 International Power Electronics Conference
CountryJapan
CityNiigata
Period20/05/201824/05/2018

Keywords

  • DC/DC converter
  • Full-bridge (FB)
  • T-type
  • Wide input voltage range

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