GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement

Yelin Wang, Nielsen T.S., Ole Kiel Jensen, Torben Larsen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Original languageEnglish
Title of host publicationSignals, Circuits and Systems (ISSCS), 2015 International Symposium on
Number of pages6
Place of PublicationRumænien
PublisherIEEE Press
Publication date14 Aug 2015
Article number7203963
ISBN (Print)978-1-4673-7488-0
DOIs
Publication statusPublished - 14 Aug 2015
Event12th International Symposium on Signals, Circuits and Systems, ISSCS 2015 - Iasi
Duration: 9 Jul 201510 Jul 2015

Conference

Conference12th International Symposium on Signals, Circuits and Systems, ISSCS 2015
CityIasi
Period09/07/201510/07/2015
SeriesInternational Symposium on Signals, Circuits and Systems (ISSCS). Proceedings

Cite this

Wang, Y., T.S., N., Jensen, O. K., & Larsen, T. (2015). GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement. In Signals, Circuits and Systems (ISSCS), 2015 International Symposium on [7203963] Rumænien: IEEE Press. International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings https://doi.org/10.1109/ISSCS.2015.7203963
Wang, Yelin ; T.S., Nielsen ; Jensen, Ole Kiel ; Larsen, Torben. / GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement. Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. Rumænien : IEEE Press, 2015. (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings).
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title = "GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement",
author = "Yelin Wang and Nielsen T.S. and Jensen, {Ole Kiel} and Torben Larsen",
year = "2015",
month = "8",
day = "14",
doi = "10.1109/ISSCS.2015.7203963",
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Wang, Y, T.S., N, Jensen, OK & Larsen, T 2015, GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement. in Signals, Circuits and Systems (ISSCS), 2015 International Symposium on., 7203963, IEEE Press, Rumænien, International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings, 12th International Symposium on Signals, Circuits and Systems, ISSCS 2015, Iasi, 09/07/2015. https://doi.org/10.1109/ISSCS.2015.7203963

GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement. / Wang, Yelin; T.S., Nielsen; Jensen, Ole Kiel; Larsen, Torben.

Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. Rumænien : IEEE Press, 2015. 7203963 (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

TY - GEN

T1 - GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement

AU - Wang, Yelin

AU - T.S., Nielsen

AU - Jensen, Ole Kiel

AU - Larsen, Torben

PY - 2015/8/14

Y1 - 2015/8/14

U2 - 10.1109/ISSCS.2015.7203963

DO - 10.1109/ISSCS.2015.7203963

M3 - Article in proceeding

SN - 978-1-4673-7488-0

BT - Signals, Circuits and Systems (ISSCS), 2015 International Symposium on

PB - IEEE Press

CY - Rumænien

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Wang Y, T.S. N, Jensen OK, Larsen T. GaN HEMT device modeling using X-parameters with emphasis on complexity reduction of harmonic load-pull measurement. In Signals, Circuits and Systems (ISSCS), 2015 International Symposium on. Rumænien: IEEE Press. 2015. 7203963. (International Symposium on Signals, Circuits and Systems (ISSCS). Proceedings). https://doi.org/10.1109/ISSCS.2015.7203963