Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

Dipen Narendra Dalal, Nicklas Christensen, Asger Bjørn Jørgensen, Simon Dyhr Sønderskov, Szymon Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

43 Citations (Scopus)
1325 Downloads (Pure)

Abstract

This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.
Original languageEnglish
Title of host publicationProceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Number of pages10
PublisherIEEE Press
Publication dateSept 2017
ISBN (Electronic)978-90-75815-27-6
DOIs
Publication statusPublished - Sept 2017
Event2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Poland
Duration: 11 Sept 201714 Sept 2017

Conference

Conference2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Country/TerritoryPoland
CityWarsaw
Period11/09/201714/09/2017

Keywords

  • Wide bandgap devices
  • Silicon carbide (SiC)
  • MOSFET
  • New switching devices
  • EMC/EMI

Fingerprint

Dive into the research topics of 'Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter'. Together they form a unique fingerprint.

Cite this