Abstract

This letter proposes a gradient-based end-of-life (EOL) criterion for power semiconductor modules under power cycling tests. It significantly improves the consistency in determining the cycle-to-failure of testing samples compared with the widely used absolute-value-based EOL criterion, such as the percentage change of on-state saturation voltage of insulated-gate bipolar transistors (IGBTs). Both analytical analyses and experimental results are presented to explain and verify the feasibility and superior consistency of the proposed one.

Original languageEnglish
JournalIEEE Transactions on Power Electronics
Volume39
Issue number3
Pages (from-to)2927-2931
Number of pages5
ISSN0885-8993
DOIs
Publication statusPublished - 1 Mar 2024

Bibliographical note

Publisher Copyright:
IEEE

Keywords

  • Aging
  • Degradation
  • Junctions
  • Standards
  • Temperature measurement
  • Voltage measurement
  • Wires
  • end-of-life criterion
  • power cycling test
  • power semiconductor modules
  • reliability

Fingerprint

Dive into the research topics of 'gEOL: A Gradient-based End-of-Life Criterion for Power Semiconductor Modules'. Together they form a unique fingerprint.

Cite this