Grating-gate high electron mobility transistors for terahertz modulation

Anne Landgrebe-Christiansen; Jacob Nørkjær Schunck; Vladimir Popok

Grating-gate high electron mobility transistors for terahertz modulation

Anne Landgrebe-Christiansen, Jacob Nørkjær Schunck, Vladimir Popok^*

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research

51 Downloads (Pure)

Abstract

Terahertz (THz) modulators are required for wireless communication, ultrafast THz interconnects and sensing applications. Great achievements in modulation are reported utilising GaN devices with two-dimensional electron gas (2DEG). In the current work, circular grating-gate transistors based on AlGaN/GaN heterostructures are designed and fabricated. Electrical characterisation of these devices reveals ohmic-like contacts for the source and drain, Schottky barrier for the gate structures and output transistor characteristics confirming the operation through a channel with 2DEG. These circular transistor structures can become a basis for the development of THz modulators where the plasmon polaritons of the grating metal structures will be coupled with the plasmon waves of the 2DEG allowing filtering and modulating THz waves.

Original language	English
Title of host publication	Proceedings of IX International Conference on Materials and Structures of Modern Electronics
Editors	Vladimir Odzhaev
Number of pages	4
Place of Publication	Minsk
Publisher	Belarusian State University
Publication date	2020
Pages	5-8
ISBN (Electronic)	978-985-881-073-3
Publication status	Published - 2020
Event	IX International Conference on Materials and Structures of Modern Electronics - Minsk, Belarus Duration: 14 Oct 2020 → 16 Oct 2020

Conference

Conference	IX International Conference on Materials and Structures of Modern Electronics
Country/Territory	Belarus
City	Minsk
Period	14/10/2020 → 16/10/2020

Keywords

AlGaN/GaN heterostructures
two-dimensional electron gas
high electron mobility transistor

Access to Document

2020Mater&StructModernElectron_Minsk_GaN HEMTFinal published version, 893 KB

AUB Link

Search for the material in Aalborg University Library's search engine

Cite this

@inproceedings{db4becec860a4ce7ae78a8938429c790,

title = "Grating-gate high electron mobility transistors for terahertz modulation",

abstract = "Terahertz (THz) modulators are required for wireless communication, ultrafast THz interconnects and sensing applications. Great achievements in modulation are reported utilising GaN devices with two-dimensional electron gas (2DEG). In the current work, circular grating-gate transistors based on AlGaN/GaN heterostructures are designed and fabricated. Electrical characterisation of these devices reveals ohmic-like contacts for the source and drain, Schottky barrier for the gate structures and output transistor characteristics confirming the operation through a channel with 2DEG. These circular transistor structures can become a basis for the development of THz modulators where the plasmon polaritons of the grating metal structures will be coupled with the plasmon waves of the 2DEG allowing filtering and modulating THz waves. ",

keywords = "AlGaN/GaN heterostructures, two-dimensional electron gas, high electron mobility transistor",

author = "Anne Landgrebe-Christiansen and Schunck, {Jacob N{\o}rkj{\ae}r} and Vladimir Popok",

year = "2020",

language = "English",

pages = "5--8",

editor = "Vladimir Odzhaev",

booktitle = "Proceedings of IX International Conference on Materials and Structures of Modern Electronics",

publisher = "Belarusian State University",

note = "IX International Conference on Materials and Structures of Modern Electronics ; Conference date: 14-10-2020 Through 16-10-2020",

}

Landgrebe-Christiansen, A, Schunck, JN & Popok, V 2020, Grating-gate high electron mobility transistors for terahertz modulation. in V Odzhaev (ed.), Proceedings of IX International Conference on Materials and Structures of Modern Electronics. Belarusian State University, Minsk, pp. 5-8, IX International Conference on Materials and Structures of Modern Electronics, Minsk, Belarus, 14/10/2020.

Grating-gate high electron mobility transistors for terahertz modulation. / Landgrebe-Christiansen, Anne; Schunck, Jacob Nørkjær; Popok, Vladimir.
Proceedings of IX International Conference on Materials and Structures of Modern Electronics. ed. / Vladimir Odzhaev. Minsk: Belarusian State University, 2020. p. 5-8.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research

TY - GEN

T1 - Grating-gate high electron mobility transistors for terahertz modulation

AU - Landgrebe-Christiansen, Anne

AU - Schunck, Jacob Nørkjær

AU - Popok, Vladimir

PY - 2020

Y1 - 2020

N2 - Terahertz (THz) modulators are required for wireless communication, ultrafast THz interconnects and sensing applications. Great achievements in modulation are reported utilising GaN devices with two-dimensional electron gas (2DEG). In the current work, circular grating-gate transistors based on AlGaN/GaN heterostructures are designed and fabricated. Electrical characterisation of these devices reveals ohmic-like contacts for the source and drain, Schottky barrier for the gate structures and output transistor characteristics confirming the operation through a channel with 2DEG. These circular transistor structures can become a basis for the development of THz modulators where the plasmon polaritons of the grating metal structures will be coupled with the plasmon waves of the 2DEG allowing filtering and modulating THz waves.

AB - Terahertz (THz) modulators are required for wireless communication, ultrafast THz interconnects and sensing applications. Great achievements in modulation are reported utilising GaN devices with two-dimensional electron gas (2DEG). In the current work, circular grating-gate transistors based on AlGaN/GaN heterostructures are designed and fabricated. Electrical characterisation of these devices reveals ohmic-like contacts for the source and drain, Schottky barrier for the gate structures and output transistor characteristics confirming the operation through a channel with 2DEG. These circular transistor structures can become a basis for the development of THz modulators where the plasmon polaritons of the grating metal structures will be coupled with the plasmon waves of the 2DEG allowing filtering and modulating THz waves.

KW - AlGaN/GaN heterostructures

KW - two-dimensional electron gas

KW - high electron mobility transistor

UR - https://elib.bsu.by/handle/123456789/257252

M3 - Article in proceeding

SP - 5

EP - 8

BT - Proceedings of IX International Conference on Materials and Structures of Modern Electronics

A2 - Odzhaev, Vladimir

PB - Belarusian State University

CY - Minsk

T2 - IX International Conference on Materials and Structures of Modern Electronics

Y2 - 14 October 2020 through 16 October 2020

ER -

Grating-gate high electron mobility transistors for terahertz modulation

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Cite this