Growth of aluminum oxide on silicon carbide with an atomically sharp interface

Ana Christina Gomes Silva, Kjeld Pedersen, Zheshen Li, Jeanette Hvam, Rajnish Dhiman, Per Morgen

Research output: Contribution to journalJournal articleResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
JournalJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Volume35
Issue number1
Number of pages7
ISSN1553-1813
DOIs
Publication statusPublished - 2017

Cite this

@article{ffbabe14eb84441398efa8f0a8530a2a,
title = "Growth of aluminum oxide on silicon carbide with an atomically sharp interface",
author = "Silva, {Ana Christina Gomes} and Kjeld Pedersen and Zheshen Li and Jeanette Hvam and Rajnish Dhiman and Per Morgen",
year = "2017",
doi = "10.1116/1.4972774",
language = "English",
volume = "35",
journal = "Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films",
issn = "1553-1813",
publisher = "American Institute of Physics",
number = "1",

}

Growth of aluminum oxide on silicon carbide with an atomically sharp interface. / Silva, Ana Christina Gomes; Pedersen, Kjeld; Li, Zheshen; Hvam, Jeanette; Dhiman, Rajnish; Morgen, Per.

In: Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 35, No. 1, 2017.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Growth of aluminum oxide on silicon carbide with an atomically sharp interface

AU - Silva, Ana Christina Gomes

AU - Pedersen, Kjeld

AU - Li, Zheshen

AU - Hvam, Jeanette

AU - Dhiman, Rajnish

AU - Morgen, Per

PY - 2017

Y1 - 2017

U2 - 10.1116/1.4972774

DO - 10.1116/1.4972774

M3 - Journal article

VL - 35

JO - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

SN - 1553-1813

IS - 1

ER -