100 keV B+ ions are implanted at high fluences into polyimide and the boron depth distributions are measured by the neutron depth profiling technique. Subsequently the implanted samples are annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inward and outward profile tails point at increased mobility and redistribution of boron atoms after implantation. Thermal annealing to the temperatures below 150°C does not change the total boron content in 1 μm thick surface layer and the boron depth profiles as well. For higher annealing temperatures a continuous desorption and significant redistribution of boron atoms is observed.
|Journal||Nuclear Instruments and Methods in Physics Reseach B|
|Number of pages||4|
|Publication status||Published - Jan 1999|