High Fluence Boron Implantation into Polyimide

J. Vacik, Vladimir Hnatowicz, J. Cervena, V. Perina, Vladimir Popok, Vladimir Odzhaev, D. Fink

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6 Citations (Scopus)


100 keV B+ ions are implanted at high fluences into polyimide and the boron depth distributions are measured by the neutron depth profiling technique. Subsequently the implanted samples are annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inward and outward profile tails point at increased mobility and redistribution of boron atoms after implantation. Thermal annealing to the temperatures below 150°C does not change the total boron content in 1 μm thick surface layer and the boron depth profiles as well. For higher annealing temperatures a continuous desorption and significant redistribution of boron atoms is observed.
Original languageEnglish
JournalNuclear Instruments and Methods in Physics Reseach B
Issue number1-4
Pages (from-to)1126-1130
Number of pages4
Publication statusPublished - Jan 1999
Externally publishedYes


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