Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang; Gong Cheng; Jianquan Wang; Chunqian Zhang; Zhi Liu; Yuhua Zuo; Jun Zheng; Chunlai Xue; Chuanbo Li; Buwen Cheng; Qiming Wang

doi:10.1186/1556-276X-9-661

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang, Gong Cheng, Jianquan Wang, Chunqian Zhang, Zhi Liu, Yuhua Zuo, Jun Zheng, Chunlai Xue, Chuanbo Li^*, Buwen Cheng, Qiming Wang

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

5 Citations (Scopus)

Abstract

An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I_ON/I_OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

Original language	English
Article number	661
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
ISSN	1931-7573
DOIs	https://doi.org/10.1186/1556-276X-9-661
Publication status	Published - 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported in part by the National Thousand Talents Program of China, the bilateral collaboration project between the Chinese Academy of Sciences and Japan Society for the Promotion of Science (Grant no GJHZ1316), the National Natural Science Foundation of China (Grant nos. 61176013 and 61177038), the Beijing Natural Science Foundation (Grant no. 2142031), the Beijing Municipal Science and Technology Commission project (Grant no. Z141100003814002), the Major State Basic Research Development Program of China (Grant nos. 2013CB632103 and 2011CBA00608), and the National High-Technology Research and Development Program of China (Grant nos. 2012AA012202 and 2011AA010302).

Publisher Copyright:
© 2014, Zhang et al.; licensee Springer.

Keywords

Horizontal transfer
Photoconductive performance
Si nanowires

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10.1186/1556-276X-9-661

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title = "Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance",

abstract = "An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.",

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note = "Funding Information: This work was supported in part by the National Thousand Talents Program of China, the bilateral collaboration project between the Chinese Academy of Sciences and Japan Society for the Promotion of Science (Grant no GJHZ1316), the National Natural Science Foundation of China (Grant nos. 61176013 and 61177038), the Beijing Natural Science Foundation (Grant no. 2142031), the Beijing Municipal Science and Technology Commission project (Grant no. Z141100003814002), the Major State Basic Research Development Program of China (Grant nos. 2013CB632103 and 2011CBA00608), and the National High-Technology Research and Development Program of China (Grant nos. 2012AA012202 and 2011AA010302). Publisher Copyright: {\textcopyright} 2014, Zhang et al.; licensee Springer.",

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AU - Zhang, Dalin

AU - Cheng, Gong

AU - Wang, Jianquan

AU - Zhang, Chunqian

AU - Liu, Zhi

AU - Zuo, Yuhua

AU - Zheng, Jun

AU - Xue, Chunlai

AU - Li, Chuanbo

AU - Cheng, Buwen

AU - Wang, Qiming

N1 - Funding Information: This work was supported in part by the National Thousand Talents Program of China, the bilateral collaboration project between the Chinese Academy of Sciences and Japan Society for the Promotion of Science (Grant no GJHZ1316), the National Natural Science Foundation of China (Grant nos. 61176013 and 61177038), the Beijing Natural Science Foundation (Grant no. 2142031), the Beijing Municipal Science and Technology Commission project (Grant no. Z141100003814002), the Major State Basic Research Development Program of China (Grant nos. 2013CB632103 and 2011CBA00608), and the National High-Technology Research and Development Program of China (Grant nos. 2012AA012202 and 2011AA010302). Publisher Copyright: © 2014, Zhang et al.; licensee Springer.

PY - 2014

Y1 - 2014

N2 - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

AB - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

KW - Horizontal transfer

KW - Photoconductive performance

KW - Si nanowires

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DO - 10.1186/1556-276X-9-661

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VL - 9

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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ER -

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Abstract

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Keywords

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