@article{990208a123944190abf2078fe48eaec1,
title = "IGBT Junction Temperature Measurement via Peak Gate Current",
keywords = "Insulated-gate bipolar transistor (IGBT), Power semiconductor devices, Reliability, Temperature measurement",
author = "Nick Baker and Stig Munk-Nielsen and Francesco Iannuzzo and Marco Liserre",
year = "2016",
month = may,
doi = "10.1109/TPEL.2015.2464714",
language = "English",
volume = "31",
pages = "3784--3793",
journal = "I E E E Transactions on Power Electronics",
issn = "0885-8993",
publisher = "IEEE",
number = "5",
}