IGBT Junction Temperature Measurement via Peak Gate Current

Research output: Contribution to journalJournal articleResearchpeer-review

70 Citations (Scopus)
Original languageEnglish
Article number7180393
JournalIEEE Transactions on Power Electronics
Volume31
Issue number5
Pages (from-to)3784-3793
Number of pages10
ISSN0885-8993
DOIs
Publication statusPublished - May 2016

Keywords

  • Insulated-gate bipolar transistor (IGBT)
  • Power semiconductor devices
  • Reliability
  • Temperature measurement

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