Abstract
An electrical method for junction temperature measurement of MOS-gated power semiconductor devices is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an insulated-gate bipolar transistor or MOSFET during turn-on. This voltage is directly proportional to the peak gate current, and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. Primary advantages of the method include an immunity to load current variation, and a good linear relationship with temperature. A measurement circuit can be integrated into a gate driver with no disruption to operation and allows autonomous measurements controlled directly via the gate signal. Advantages and disadvantages of the method are discussed.
| Original language | English |
|---|---|
| Article number | 7180393 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 31 |
| Issue number | 5 |
| Pages (from-to) | 3784-3793 |
| Number of pages | 10 |
| ISSN | 0885-8993 |
| DOIs | |
| Publication status | Published - May 2016 |
Keywords
- Insulated-gate bipolar transistor (IGBT)
- Power semiconductor devices
- Reliability
- Temperature measurement