Impact of lifetime model selections on the reliability prediction of IGBT modules in modular multilevel converters

Yi Zhang, Huai Wang, Zhongxu Wang, Yongheng Yang, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

35 Citations (Scopus)
478 Downloads (Pure)

Abstract

Power cycling in semiconductor modules contributes to repetitive thermal-mechanical stresses, which in return accumulate as fatigue on the devices, and challenge the lifetime. Typically, lifetime models are expressed in number-of-cycles, within which the device can operate without failures under predefined conditions. In these lifetime models, thermal stresses (e.g., junction temperature variations) are commonly considered. However, the lifetime of power devices involves in crossdisciplinary knowledge. As a result, the lifetime prediction is affected by the selected lifetime model. In this regard, this paper benchmarks the most commonly-employed lifetime models of power semiconductor devices for offshore Modular Multilevel Converters (MMC) based wind farms. The benchmarking reveals that the lifetime model selection has a significant impact on the lifetime estimation. The use of analytical lifetime models should be justified in terms of applicability, limitations, and underlying statistical properties.
Original languageEnglish
Title of host publicationProceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages6
PublisherIEEE Press
Publication dateOct 2017
Pages4202-4207
ISBN (Print)978-1-5090-2997-6
DOIs
Publication statusPublished - Oct 2017
Event2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, United States
Duration: 1 Oct 20175 Oct 2017

Conference

Conference2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Country/TerritoryUnited States
CityCincinnati, Ohio
Period01/10/201705/10/2017
SeriesIEEE Energy Conversion Congress and Exposition
ISSN2329-3721

Keywords

  • Insulated gate bipolar transistors (IGBTs)
  • Lifetime model
  • Modular Multilevel Converter
  • Power semiconductor device
  • Reliability

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