Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients

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Increased switching speeds of WBG semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances which are inherent in packaging design. This is of increasing concern particularly in case of newly emerging medium voltage SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current become comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter EMI as well as performance in terms of switching losses. The key objective of the paper is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well defined approach to dissect the switching energy dissipation is proposed, based on which the detail analysis and quantitative measurements of the module parasitic capacitance impact in terms of added switching energy losses and common mode currents is investigated using a custom packaged 10 kV half bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveals that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it can not be overlooked considering its intended application in the high power medium voltage power electronic converters.
Original languageEnglish
JournalI E E E Journal of Emerging and Selected Topics in Power Electronics
Issue number1
Pages (from-to)298 - 310
Number of pages12
Publication statusPublished - Aug 2020



  • Silicon Carbide
  • 10 kV SiC MOSFETs
  • Parasitic capacitance ,
  • Switching losses

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