TY - JOUR
T1 - Impact of Solder Degradation on VCE of IGBT Module
T2 - Experiments and Modeling
AU - Jia, Y.
AU - Huang, Y.
AU - Xiao, F.
AU - Deng, H.
AU - Duan, Y.
AU - Iannuzzo, F.
PY - 2022/8
Y1 - 2022/8
N2 - Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electrothermal coupling in the IGBT module, solder degradation also affects electrical characteristics, such as ON-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper first. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm's law in the calculation and can respond to the real-time dynamic current. So, it could be conveniently used in the finite element method (FEM)-based simulation. Meanwhile, a realistic 3-D degradation model of the solder layer is constructed by an image processing method. Furthermore, an electrothermal coupling model based on the finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.
AB - Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electrothermal coupling in the IGBT module, solder degradation also affects electrical characteristics, such as ON-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper first. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm's law in the calculation and can respond to the real-time dynamic current. So, it could be conveniently used in the finite element method (FEM)-based simulation. Meanwhile, a realistic 3-D degradation model of the solder layer is constructed by an image processing method. Furthermore, an electrothermal coupling model based on the finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.
KW - Insulated gate bipolar transistors
KW - Degradation
KW - Temperature
KW - Thermal degradation
KW - Thermal resistance
KW - Finite element analysis
KW - Insulated gate bipolar transistor (IGBT)
KW - solder degradation
KW - failure modes decoupling
KW - electro-thermal model
KW - Insulated gate bipolar transistor (IGBT)
KW - Solder degradation
KW - Failure modes decoupling
KW - Electro-thermal model
KW - Electrothermal model
KW - insulated gate bipolar transistor (IGBT)
KW - failure modes decoupling
KW - solder degradation
UR - http://www.scopus.com/inward/record.url?scp=85136230394&partnerID=8YFLogxK
U2 - 10.1109/JESTPE.2019.2928478
DO - 10.1109/JESTPE.2019.2928478
M3 - Journal article
SN - 2168-6777
VL - 10
SP - 4536
EP - 4545
JO - IEEE Journal of Emerging and Selected Topics in Power Electronics
JF - IEEE Journal of Emerging and Selected Topics in Power Electronics
IS - 4
ER -