Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

He Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

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Abstract

In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.
Original languageEnglish
Title of host publication34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Number of pages6
PublisherIEEE Press
Publication date24 May 2019
Pages332-337
Article number8722300
ISBN (Print)978-1-5386-8331-6
ISBN (Electronic)978-1-5386-8330-9
DOIs
Publication statusPublished - 24 May 2019
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: 17 Mar 201921 Mar 2019

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
CountryUnited States
CityAnaheim
Period17/03/201921/03/2019
SponsorIEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)
SeriesI E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
ISSN1048-2334

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Keywords

  • Silicon carbide
  • Power MOSFET
  • Short-circuit test
  • Case temperature

Cite this

Du, H., Reigosa, P. D., Iannuzzo, F., & Ceccarelli, L. (2019). Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 (pp. 332-337). [8722300] IEEE Press. I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings https://doi.org/10.1109/APEC.2019.8722300