In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures

Gaurav Gupta; Shivakumar D. Thammaiah; Raymond J Hueting; Lis Karen Nanver

doi:10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures

Gaurav Gupta, Shivakumar D. Thammaiah, Raymond J Hueting, Lis Karen Nanver

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

Abstract

Palladium (Pd) capped molybdenum-oxide (MoO _x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10 ⁸ and a low leakage current of ~10 ^-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO _x. Reports in the literature that an inversion layer of holes should be present at the MoO _x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Number of pages	6
Publisher	IEEE
Publication date	6 Jun 2019
Pages	12-17
Article number	8730920
ISBN (Print)	978-1-7281-1464-4
ISBN (Electronic)	9781728114668
DOIs	https://doi.org/10.1109/ICMTS.2019.8730920
Publication status	Published - 6 Jun 2019
Event	32nd IEEE International Conference on Microelectronic Test Structures - Fukuoka, Japan Duration: 18 Mar 2019 → 21 Mar 2019 Conference number: 32

Conference

Conference	32nd IEEE International Conference on Microelectronic Test Structures
Number	32
Country/Territory	Japan
City	Fukuoka
Period	18/03/2019 → 21/03/2019

Series	International Conference on Microelectronic Test Structures
ISSN	2158-1029

Keywords

Diodes
Inversion layer
Metal workfunction
Molybdenum-oxide
Resistivity
Sheet resistance
Silicon
Ultrashal-low junctions

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Gupta, G., Thammaiah, S. D., Hueting, R. J., & Nanver, L. K. (2019). In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 12-17). Article 8730920 IEEE. Advance online publication. https://doi.org/10.1109/ICMTS.2019.8730920

Gupta, Gaurav ; Thammaiah, Shivakumar D. ; Hueting, Raymond J et al. / In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. pp. 12-17 (International Conference on Microelectronic Test Structures ).

@inproceedings{a1f334bdf08b4b07a70f67bdd174b4b0,

title = "In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures",

abstract = "Palladium (Pd) capped molybdenum-oxide (MoO x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10 8 and a low leakage current of ~10 -11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO x. Reports in the literature that an inversion layer of holes should be present at the MoO x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found. ",

keywords = "Diodes, Inversion layer, Metal workfunction, Molybdenum-oxide, Resistivity, Sheet resistance, Silicon, Ultrashal-low junctions",

author = "Gaurav Gupta and Thammaiah, {Shivakumar D.} and Hueting, {Raymond J} and Nanver, {Lis Karen}",

year = "2019",

month = jun,

day = "6",

doi = "10.1109/ICMTS.2019.8730920",

language = "English",

isbn = "978-1-7281-1464-4",

series = "International Conference on Microelectronic Test Structures ",

publisher = "IEEE",

pages = "12--17",

booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",

address = "United States",

note = "32nd IEEE International Conference on Microelectronic Test Structures , ICMTS ; Conference date: 18-03-2019 Through 21-03-2019",

}

Gupta, G, Thammaiah, SD, Hueting, RJ & Nanver, LK 2019, In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730920, IEEE, International Conference on Microelectronic Test Structures , pp. 12-17, 32nd IEEE International Conference on Microelectronic Test Structures , Fukuoka, Japan, 18/03/2019. https://doi.org/10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. / Gupta, Gaurav; Thammaiah, Shivakumar D.; Hueting, Raymond J et al.
2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 12-17 8730920 (International Conference on Microelectronic Test Structures ).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures

AU - Gupta, Gaurav

AU - Thammaiah, Shivakumar D.

AU - Hueting, Raymond J

AU - Nanver, Lis Karen

N1 - Conference code: 32

PY - 2019/6/6

Y1 - 2019/6/6

N2 - Palladium (Pd) capped molybdenum-oxide (MoO x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10 8 and a low leakage current of ~10 -11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO x. Reports in the literature that an inversion layer of holes should be present at the MoO x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

AB - Palladium (Pd) capped molybdenum-oxide (MoO x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10 8 and a low leakage current of ~10 -11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO x. Reports in the literature that an inversion layer of holes should be present at the MoO x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

KW - Diodes

KW - Inversion layer

KW - Metal workfunction

KW - Molybdenum-oxide

KW - Resistivity

KW - Sheet resistance

KW - Silicon

KW - Ultrashal-low junctions

UR - http://www.scopus.com/inward/record.url?scp=85067865724&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2019.8730920

DO - 10.1109/ICMTS.2019.8730920

M3 - Article in proceeding

SN - 978-1-7281-1464-4

T3 - International Conference on Microelectronic Test Structures

SP - 12

EP - 17

BT - 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019

PB - IEEE

T2 - 32nd IEEE International Conference on Microelectronic Test Structures

Y2 - 18 March 2019 through 21 March 2019

ER -

Gupta G, Thammaiah SD, Hueting RJ, Nanver LK. In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE. 2019. p. 12-17. 8730920. (International Conference on Microelectronic Test Structures ). Epub 2019 Jun 6. doi: 10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures

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