Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs; Matthew McDonald; Søren Sørensen; Kristian Rechendorff; Vaclav Petrak; Milos Nesladek; Nico Rijkhoff; Cristian P. Pennisi

doi:10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs, Matthew McDonald, Søren Sørensen, Kristian Rechendorff, Vaclav Petrak, Milos Nesladek, Nico Rijkhoff, Cristian P. Pennisi

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

5 Citations (Scopus)

Abstract

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

Original language	English
Title of host publication	Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal
Publisher	SCITEPRESS Digital Library
Publication date	2015
Pages	106-109
ISBN (Print)	978-989-758-161-8
DOIs	https://doi.org/10.5220/0005606401060109
Publication status	Published - 2015
Event	International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX - Lisbon, Portugal Duration: 16 Nov 2015 → 17 Nov 2015 Conference number: 3

Conference

Conference	International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX
Number	3
Country/Territory	Portugal
City	Lisbon
Period	16/11/2015 → 17/11/2015

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10.5220/0005606401060109

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MERIDIAN: Micro and Nano Engineered Bi-Directional Carbon Interfaces for Advanced Peripheral Nervous System Prosthetics and Hybrid Bionics
Pennisi, P., Zachar, V., Alcaide, M. & Papaioannou, S.
European Commission
01/03/2012 → 28/02/2015
Project: Research

Cite this

Meijs, S., McDonald, M., Sørensen, S., Rechendorff, K., Petrak, V., Nesladek, M., Rijkhoff, N., & Pennisi, C. P. (2015). Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. In Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal (pp. 106-109). SCITEPRESS Digital Library. https://doi.org/10.5220/0005606401060109

Meijs, Suzan ; McDonald, Matthew ; Sørensen, Søren et al. / Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. pp. 106-109

@inproceedings{7878af4bbf06448c82f76b4ce2fc257b,

title = "Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films",

abstract = "The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.",

author = "Suzan Meijs and Matthew McDonald and S{\o}ren S{\o}rensen and Kristian Rechendorff and Vaclav Petrak and Milos Nesladek and Nico Rijkhoff and Pennisi, {Cristian P.}",

year = "2015",

doi = "10.5220/0005606401060109",

language = "English",

isbn = "978-989-758-161-8",

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booktitle = "Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal",

publisher = "SCITEPRESS Digital Library",

note = "International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX ; Conference date: 16-11-2015 Through 17-11-2015",

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Meijs, S, McDonald, M, Sørensen, S, Rechendorff, K, Petrak, V, Nesladek, M, Rijkhoff, N & Pennisi, CP 2015, Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. in Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, pp. 106-109, International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX, Lisbon, Portugal, 16/11/2015. https://doi.org/10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. / Meijs, Suzan; McDonald, Matthew; Sørensen, Søren et al.
Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. p. 106-109.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

AU - Meijs, Suzan

AU - McDonald, Matthew

AU - Sørensen, Søren

AU - Rechendorff, Kristian

AU - Petrak, Vaclav

AU - Nesladek, Milos

AU - Rijkhoff, Nico

AU - Pennisi, Cristian P.

N1 - Conference code: 3

PY - 2015

Y1 - 2015

N2 - The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

AB - The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

U2 - 10.5220/0005606401060109

DO - 10.5220/0005606401060109

M3 - Article in proceeding

SN - 978-989-758-161-8

SP - 106

EP - 109

BT - Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal

PB - SCITEPRESS Digital Library

T2 - International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX

Y2 - 16 November 2015 through 17 November 2015

ER -

Meijs S, McDonald M, Sørensen S, Rechendorff K, Petrak V, Nesladek M et al. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. In Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library. 2015. p. 106-109 doi: 10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

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Projects

MERIDIAN: Micro and Nano Engineered Bi-Directional Carbon Interfaces for Advanced Peripheral Nervous System Prosthetics and Hybrid Bionics

Cite this