Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs, Matthew McDonald, Søren Sørensen, Kristian Rechendorff, Vaclav Petrak, Milos Nesladek, Nico Rijkhoff, Cristian P. Pennisi

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

4 Citations (Scopus)

Abstract

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.
Original languageEnglish
Title of host publicationProceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal
PublisherSCITEPRESS Digital Library
Publication date2015
Pages106-109
ISBN (Print)978-989-758-161-8
DOIs
Publication statusPublished - 2015
EventInternational Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX - Lisbon, Portugal
Duration: 16 Nov 201517 Nov 2015
Conference number: 3

Conference

ConferenceInternational Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX
Number3
CountryPortugal
CityLisbon
Period16/11/201517/11/2015

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