Integrating 10kV SiC MOSFET into Battery Energy Storage System with A Scalable Converter-based Self-powered Gate Driver

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Abstract

In the hardware design of Battery Energy Storage System (BESS) interface, in order to meet the high voltage requirement of grid side, integrating 10 kV Silicon-Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) into the interface could simplify the topology by reducing the component count. However, the conventional gate driver design is challenging and inextensible in BESS, since the high voltage rating and high dv/dt bring the requirements of high voltage isolation and low common-mode capacitance. Therefore, in this paper, a scalable converter-based self-powered (SCS) gate driver is further proposed. A 5 kV-input power extracting converter based on a voltage-balanced SiC MOSFET stack is constructed to self-power the gate driver, which exhibits simplification of basic topology and sufficient gate driver power handling capability regardless of the switching requirement of main loop power device. Besides this, the power extracting converter is designed to act as a clamping Resistor-Capacitor-Diode (RCD) snubber circuit, which makes the SCS gate driver scalable to the series connection of power devices. Analysis and design consideration are given in detail, followed by the experimental verification using 10 kV/10 A SiC MOSFETs.
Original languageEnglish
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Number of pages10
ISSN2168-6777
DOIs
Publication statusE-pub ahead of print - 12 Jan 2022

Keywords

  • Battery Energy Storage System (BESS)
  • Gate drivers
  • Logic gates
  • MOSFET
  • SiC MOSFET
  • Silicon carbide
  • Snubbers
  • Switches
  • Voltage
  • self-powered gate driver
  • series connected

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