Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli; Haoze Luo; Francesco Iannuzzo

doi:10.1016/j.microrel.2018.07.027

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo

Research output: Contribution to journal › Conference article in Journal › Research › peer-review

21 Citations (Scopus)

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Abstract

In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

Original language	English
Journal	Microelectronics Reliability
Volume	88-90
Pages (from-to)	627-630
Number of pages	4
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2018.07.027
Publication status	Published - Sept 2018
Event	29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark Duration: 1 Oct 2018 → 5 Oct 2018 Conference number: 29th http://www.esref2018conf.org/

Conference

Conference	29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Number	29th
Location	AKKC
Country/Territory	Denmark
City	Aalborg
Period	01/10/2018 → 05/10/2018
Internet address	http://www.esref2018conf.org/

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10.1016/j.microrel.2018.07.027

Investigating SiC MOSFET body diode’s light emission as Temperature-Sensitive Electrical ParameterAccepted author manuscript, 0.98 MBLicence: CC BY-NC-ND 4.0

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Cite this

@inproceedings{cb7c59e00c0b4b6a9f49649cc6bf7421,

title = "Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter",

abstract = "In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.",

author = "Lorenzo Ceccarelli and Haoze Luo and Francesco Iannuzzo",

year = "2018",

month = sep,

doi = "10.1016/j.microrel.2018.07.027",

language = "English",

volume = "88-90",

pages = "627--630",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

note = "29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2018 ; Conference date: 01-10-2018 Through 05-10-2018",

url = "http://www.esref2018conf.org/",

}

TY - GEN

T1 - Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

AU - Ceccarelli, Lorenzo

AU - Luo, Haoze

AU - Iannuzzo, Francesco

N1 - Conference code: 29th

PY - 2018/9

Y1 - 2018/9

N2 - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

AB - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

UR - http://www.scopus.com/inward/record.url?scp=85054806376&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.07.027

DO - 10.1016/j.microrel.2018.07.027

M3 - Conference article in Journal

SN - 0026-2714

VL - 88-90

SP - 627

EP - 630

JO - Microelectronics Reliability

JF - Microelectronics Reliability

T2 - 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Y2 - 1 October 2018 through 5 October 2018

ER -

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

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APETT: Advanced Power Electronic Technology and Tools

Center Of Reliable Power Electronics (CORPE)

29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Cite this

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Abstract

Conference

Access to Document

AUB Link

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Fingerprint

Projects

APETT: Advanced Power Electronic Technology and Tools

Center Of Reliable Power Electronics (CORPE)

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29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Cite this