Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo

Research output: Contribution to journalConference article in JournalResearchpeer-review

15 Citations (Scopus)
212 Downloads (Pure)

Abstract

In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.
Original languageEnglish
JournalMicroelectronics Reliability
Volume88-90
Pages (from-to)627-630
Number of pages4
ISSN0026-2714
DOIs
Publication statusPublished - Sept 2018
Event29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark
Duration: 1 Oct 20185 Oct 2018
Conference number: 29th
http://www.esref2018conf.org/

Conference

Conference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Number29th
LocationAKKC
Country/TerritoryDenmark
CityAalborg
Period01/10/201805/10/2018
Internet address

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