Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Research output: Contribution to journalConference article in JournalResearchpeer-review

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Abstract

This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.
Original languageEnglish
JournalMicroelectronics Reliability
Volume88-90
Pages (from-to)661-665
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 1 Sep 2018
Event29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark
Duration: 1 Oct 20185 Oct 2018
Conference number: 29th
http://www.esref2018conf.org/

Conference

Conference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Number29th
LocationAKKC
CountryDenmark
CityAalborg
Period01/10/201805/10/2018
Internet address

Fingerprint

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation
Degradation
Leakage currents
leakage
Threshold voltage
threshold voltage
waveforms
pulse duration
Power MOSFET
shift
predictions
pulses

Keywords

  • SiC MOSFET
  • SiC power module
  • Short-circuit
  • Degradation indicators

Cite this

@inproceedings{9817e10605414306af985c9787280bae,
title = "Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules",
abstract = "This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.",
keywords = "SiC MOSFET, SiC power module, Short-circuit, Degradation indicators",
author = "He Du and Reigosa, {Paula Diaz} and Francesco Iannuzzo and Lorenzo Ceccarelli",
year = "2018",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2018.06.039",
language = "English",
volume = "88-90",
pages = "661--665",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. / Du, He; Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo.

In: Microelectronics Reliability, Vol. 88-90, 01.09.2018, p. 661-665.

Research output: Contribution to journalConference article in JournalResearchpeer-review

TY - GEN

T1 - Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

AU - Du, He

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Ceccarelli, Lorenzo

PY - 2018/9/1

Y1 - 2018/9/1

N2 - This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.

AB - This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.

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