Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

He Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

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3 Citations (Scopus)
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Abstract

This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.
Original languageEnglish
JournalMicroelectronics Reliability
Volume88-90
Pages (from-to)661-665
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - 1 Sep 2018
Event29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark
Duration: 1 Oct 20185 Oct 2018
Conference number: 29th
http://www.esref2018conf.org/

Conference

Conference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Number29th
LocationAKKC
CountryDenmark
CityAalborg
Period01/10/201805/10/2018
Internet address

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Keywords

  • SiC MOSFET
  • SiC power module
  • Short-circuit
  • Degradation indicators

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