Junction temperature measurement in a power semiconductor module

Research output: Patent

Abstract

A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.
Original languageEnglish
IPCG01K 7/16 (2006.01)
Patent numberWO/2018/086666
Country/TerritoryDenmark
Priority date08/11/2016
Publication statusPublished - 17 May 2018

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