Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation

Uimin Choi; Frede Blaabjerg; Ke Ma

doi:10.1109/APEC.2017.7931017

Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

6 Citations (Scopus)

Abstract

In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.

Original language	English
Title of host publication	Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages	6
Publisher	IEEE Press
Publication date	Mar 2017
Pages	2276-2281
ISBN (Print)	978-1-5090-5366-7
DOIs	https://doi.org/10.1109/APEC.2017.7931017
Publication status	Published - Mar 2017
Event	2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa Convention Center, Tampa, FL, United States Duration: 26 Mar 2017 → 30 Mar 2017

Conference

Conference	2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Location	Tampa Convention Center
Country/Territory	United States
City	Tampa, FL
Period	26/03/2017 → 30/03/2017

Keywords

Insulated gate bipolar transistors
Stress
Junctions
Voltage measurement
Predictive models
Reliability

Access to Document

10.1109/APEC.2017.7931017

AUB Link

Search for the material in Aalborg University Library's search engine

Cite this

@inproceedings{93951bd6538740d2b7f82fbf2097b897,

title = "Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation",

abstract = "In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.",

keywords = "Insulated gate bipolar transistors, Stress, Junctions, Voltage measurement, Predictive models, Reliability",

author = "Uimin Choi and Frede Blaabjerg and Ke Ma",

year = "2017",

month = mar,

doi = "10.1109/APEC.2017.7931017",

language = "English",

isbn = "978-1-5090-5366-7",

pages = "2276--2281",

booktitle = "Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

note = "2017 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 26-03-2017 Through 30-03-2017",

}

Choi, U, Blaabjerg, F & Ma, K 2017, Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation. in Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, pp. 2276-2281, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, United States, 26/03/2017. https://doi.org/10.1109/APEC.2017.7931017

TY - GEN

T1 - Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation

AU - Choi, Uimin

AU - Blaabjerg, Frede

AU - Ma, Ke

PY - 2017/3

Y1 - 2017/3

N2 - In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.

AB - In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.

KW - Insulated gate bipolar transistors

KW - Stress

KW - Junctions

KW - Voltage measurement

KW - Predictive models

KW - Reliability

U2 - 10.1109/APEC.2017.7931017

DO - 10.1109/APEC.2017.7931017

M3 - Article in proceeding

SN - 978-1-5090-5366-7

SP - 2276

EP - 2281

BT - Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

T2 - 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 26 March 2017 through 30 March 2017

ER -

Lifetime Prediction of IGBT Modules based on Linear Damage Accumulation

Abstract

Conference

Keywords

Access to Document

AUB Link

Fingerprint

Cite this