Loss Prediction of Medium Voltage Power Modules: Trade-offs between Accuracy and Complexity

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

3 Citations (Scopus)

Abstract

Advances in high breakdown voltage SiC MOSFETs allows design of medium voltage power modules with simpler topologies, however, high dv/dt in addition to high di/dt makes parasitics of power modules more important to consider in loss estimations. Correct estimations can help prevent costly and time-consuming problems in a design process. Data sheet values can be used directly for loss estimation, but more detailed approaches in using device-level SPICE model fitting and inclusion of power module parasitics will give a more detailed estimation and may be used to predict transient behavior at a cost of increased complexity. This paper will quantitatively compare the switching loss predictive capability of different approaches in the case study of a custom-built medium voltage power module for varying operating conditions. It is found that by including parasitics loss prediction error is reduced from 15-25% to a few percent at high DC-link voltage for the case-study chosen.
Original languageEnglish
Title of host publicationProceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages7
Place of PublicationBaltimore, MD, USA
PublisherIEEE Press
Publication dateSep 2019
Pages4102-4108
Article number8913066
ISBN (Electronic)9781728103952
DOIs
Publication statusPublished - Sep 2019
Event2019 IEEE Energy Conversion Congress and Exposition - Baltimore, United States
Duration: 29 Sep 20193 Oct 2019
Conference number: 2019
http://www.ieee-ecce.org/2019/

Conference

Conference2019 IEEE Energy Conversion Congress and Exposition
Number2019
Country/TerritoryUnited States
CityBaltimore
Period29/09/201903/10/2019
Internet address
SeriesIEEE Energy Conversion Congress and Exposition
ISSN2329-3721

Keywords

  • Loss Estimation
  • SPICE
  • Q3D
  • Medium Voltage
  • SiC MOSFET

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