TY - GEN
T1 - Lumped-charge model for gate turn-off thyristors suitable for circuit simulation
AU - Iannuzzo, F.
AU - Busatto, G.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - An innovative formulation of the lumped charge approach is used to extract a circuit model of high voltage gate turn-off thyristor (GTO) suitable to accurately predict their static and dynamic characteristics. The model includes the effects of depletion capacitance, non-quasi-static phenomena, the avalanche breakdown of the cathode junction and the effects of the anode shorts. The accuracy of the model can be increased thanks to its modularity and expandability. The equations of the model are given in such a form, which can be easily incorporated into PSPICE simulators as a sub-circuit net-list. The model was tested with success on devices rated at 4500 V and 2500 A.
AB - An innovative formulation of the lumped charge approach is used to extract a circuit model of high voltage gate turn-off thyristor (GTO) suitable to accurately predict their static and dynamic characteristics. The model includes the effects of depletion capacitance, non-quasi-static phenomena, the avalanche breakdown of the cathode junction and the effects of the anode shorts. The accuracy of the model can be increased thanks to its modularity and expandability. The equations of the model are given in such a form, which can be easily incorporated into PSPICE simulators as a sub-circuit net-list. The model was tested with success on devices rated at 4500 V and 2500 A.
UR - http://www.scopus.com/inward/record.url?scp=0032636798&partnerID=8YFLogxK
U2 - 10.1016/S0026-2692(98)00177-3
DO - 10.1016/S0026-2692(98)00177-3
M3 - Conference article in Journal
AN - SCOPUS:0032636798
SN - 0026-2692
VL - 30
SP - 543
EP - 550
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 6
ER -