MAGFET based current sensing for power integrated circuit

Giovanni Busatto*, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

15 Citations (Scopus)


A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 μm BiCMOS ALCATEL technology, to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor, implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT.
Original languageEnglish
JournalMicroelectronics Reliability
Issue number4
Pages (from-to)577-583
Number of pages7
Publication statusPublished - 1 Apr 2003
Externally publishedYes

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