Mechanisms of metallization degradation in high power diodes

Mads Brincker, Peter Kjær Kristensen, Kristian Bonderup Pedersen, Vladimir Popok

    Research output: Contribution to journalConference article in JournalResearchpeer-review

    2 Citations (Scopus)

    Abstract

    Under operation the topside metallization of power electronic chips is commonly observed to degrade and thereby affecta device's electrical characteristics. However, the mechanisms of the degradation process and the role of environmental factors are not yet fully understood. In this work, we investigate the metallization degradation by passive thermal cycling of unpackaged high-power diode chips in different controlled atmospheres. The electrical degradation of the metallization is characterized by sheet resistance measurements, while the microstructural damage is investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). To study the evolution of the chemical composition of the metallization, energy dispersive X-ray spectroscopy (EDX) is also applied. Since the degradation depends on the initial microstructure of the metallization, the film texture and grain size distribution is determined using electron backscatter diffraction (EBSD). The obtained data show that the type of atmosphere plays a minor role in the degradation process, with a slight tendency that cycling in dry nitrogen atmosphere accelerates the degradation compared to the experiments in ambient atmosphere with a controlled relative humidity of 50 and 95%.
    Original languageEnglish
    JournalMicroelectronics Reliability
    Volume64
    Pages (from-to)489–493
    Number of pages5
    ISSN0026-2714
    DOIs
    Publication statusPublished - 18 Sep 2016
    Event27th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, - Händel-Halle
    Duration: 19 Sep 201622 Sep 2016
    Conference number: 27
    http://conference.vde.com/esref-2016/Pages/default.aspx

    Conference

    Conference27th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES,
    Number27
    CityHändel-Halle
    Period19/09/201622/09/2016
    Internet address

    Fingerprint

    Metallizing
    diodes
    degradation
    Degradation
    atmospheres
    chips (electronics)
    controlled atmospheres
    cycles
    Sheet resistance
    Thermal cycling
    Power electronics
    diffraction
    Electron diffraction
    humidity
    Atmospheric humidity
    chemical composition
    tendencies
    x rays
    Nitrogen
    textures

    Keywords

    • Metallization degradation
    • Thermo-mechanical fatigue
    • Aluminum
    • Thin film
    • Plastic deformation

    Cite this

    @inproceedings{bde85365db9f4be48f4b9196235bff1f,
    title = "Mechanisms of metallization degradation in high power diodes",
    abstract = "Under operation the topside metallization of power electronic chips is commonly observed to degrade and thereby affecta device's electrical characteristics. However, the mechanisms of the degradation process and the role of environmental factors are not yet fully understood. In this work, we investigate the metallization degradation by passive thermal cycling of unpackaged high-power diode chips in different controlled atmospheres. The electrical degradation of the metallization is characterized by sheet resistance measurements, while the microstructural damage is investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). To study the evolution of the chemical composition of the metallization, energy dispersive X-ray spectroscopy (EDX) is also applied. Since the degradation depends on the initial microstructure of the metallization, the film texture and grain size distribution is determined using electron backscatter diffraction (EBSD). The obtained data show that the type of atmosphere plays a minor role in the degradation process, with a slight tendency that cycling in dry nitrogen atmosphere accelerates the degradation compared to the experiments in ambient atmosphere with a controlled relative humidity of 50 and 95{\%}.",
    keywords = "Metallization degradation, Thermo-mechanical fatigue, Aluminum, Thin film, Plastic deformation",
    author = "Mads Brincker and Kristensen, {Peter Kj{\ae}r} and Pedersen, {Kristian Bonderup} and Vladimir Popok",
    year = "2016",
    month = "9",
    day = "18",
    doi = "10.1016/j.microrel.2016.07.033",
    language = "English",
    volume = "64",
    pages = "489–493",
    journal = "Microelectronics Reliability",
    issn = "0026-2714",
    publisher = "Pergamon Press",

    }

    Mechanisms of metallization degradation in high power diodes. / Brincker, Mads; Kristensen, Peter Kjær; Pedersen, Kristian Bonderup; Popok, Vladimir.

    In: Microelectronics Reliability, Vol. 64, 18.09.2016, p. 489–493.

    Research output: Contribution to journalConference article in JournalResearchpeer-review

    TY - GEN

    T1 - Mechanisms of metallization degradation in high power diodes

    AU - Brincker, Mads

    AU - Kristensen, Peter Kjær

    AU - Pedersen, Kristian Bonderup

    AU - Popok, Vladimir

    PY - 2016/9/18

    Y1 - 2016/9/18

    N2 - Under operation the topside metallization of power electronic chips is commonly observed to degrade and thereby affecta device's electrical characteristics. However, the mechanisms of the degradation process and the role of environmental factors are not yet fully understood. In this work, we investigate the metallization degradation by passive thermal cycling of unpackaged high-power diode chips in different controlled atmospheres. The electrical degradation of the metallization is characterized by sheet resistance measurements, while the microstructural damage is investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). To study the evolution of the chemical composition of the metallization, energy dispersive X-ray spectroscopy (EDX) is also applied. Since the degradation depends on the initial microstructure of the metallization, the film texture and grain size distribution is determined using electron backscatter diffraction (EBSD). The obtained data show that the type of atmosphere plays a minor role in the degradation process, with a slight tendency that cycling in dry nitrogen atmosphere accelerates the degradation compared to the experiments in ambient atmosphere with a controlled relative humidity of 50 and 95%.

    AB - Under operation the topside metallization of power electronic chips is commonly observed to degrade and thereby affecta device's electrical characteristics. However, the mechanisms of the degradation process and the role of environmental factors are not yet fully understood. In this work, we investigate the metallization degradation by passive thermal cycling of unpackaged high-power diode chips in different controlled atmospheres. The electrical degradation of the metallization is characterized by sheet resistance measurements, while the microstructural damage is investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). To study the evolution of the chemical composition of the metallization, energy dispersive X-ray spectroscopy (EDX) is also applied. Since the degradation depends on the initial microstructure of the metallization, the film texture and grain size distribution is determined using electron backscatter diffraction (EBSD). The obtained data show that the type of atmosphere plays a minor role in the degradation process, with a slight tendency that cycling in dry nitrogen atmosphere accelerates the degradation compared to the experiments in ambient atmosphere with a controlled relative humidity of 50 and 95%.

    KW - Metallization degradation

    KW - Thermo-mechanical fatigue

    KW - Aluminum

    KW - Thin film

    KW - Plastic deformation

    UR - http://www.sciencedirect.com/science/article/pii/S0026271416301792

    U2 - 10.1016/j.microrel.2016.07.033

    DO - 10.1016/j.microrel.2016.07.033

    M3 - Conference article in Journal

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    JO - Microelectronics Reliability

    JF - Microelectronics Reliability

    SN - 0026-2714

    ER -