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Medium Voltage Soft-Switching DC/DC Converter With Series-Connected SiC MOSFETs

  • Zhebie Lu
  • , Chengmin Li
  • , Ankang Zhu
  • , Haoze Luo
  • , Chushan Li
  • , Wuhua Li
  • , Xiangning He

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Nowadays, due to the growing demands of data centers, the traditional line frequency transformer based data center power distribution system (DC-PDS) is becoming bulky and inefficient. Although SST-based DC-PDS dramatically improves the system efficiency, the traditional multicell SST with input-series output-parallel architectures has limitations. Using high-voltage devices to develop single-cell SST improves system performance, however, its application is limited by high-voltage power devices. As an alternative solution, achieving high blocking voltage through the series connection of low-voltage devices brings several advantages. Nevertheless, the series connection brings about two main problems, namely the voltage imbalance among devices and the increment of switching loss. This article proposes a medium voltage series resonant converter (MVSRC) with series-connected SiC MOSFETs. By adding snubber capacitor to each SiC MOSFET and working at LLC resonant soft-switching mode, the voltage imbalance is reduced and switching loss is decreased. Due to snubber capacitors, there are differences between MVSRC and traditional LLC converter, hence the analytical model of MVSRC is established. Moreover, the voltage imbalance model is established and the voltage imbalance sensitivity is defined to guide the snubber parameter selections. Then, a design example of the 99% efficient 5-kV/400-V prototype is presented. Last, the experimental results show that the voltage imbalance is reduced effectively and the switching loss is decreased dramatically, verifying the validity of proposed methods and the accuracy of analysis.
Original languageEnglish
Article number9133494
JournalIEEE Transactions on Power Electronics
Volume36
Issue number2
Pages (from-to)1451-1462
Number of pages12
ISSN1941-0107
DOIs
Publication statusPublished - 1 Feb 2021
Externally publishedYes

Keywords

  • Silicon carbide
  • MOSFET
  • Snubbers
  • Capacitors
  • Medium voltage
  • Transient analysis
  • Computer architecture

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