Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Mariia M. Rozhavskaia, Sergey A. Kukushkin, Andrey Osipov, Alexandr V. Myasoedov, Sergey I. Troshkov, Lev M. Sorokin, Pavel N. Brunkov, Alexandr V. Baklanov, Rodion S. Telyatnik, Raghavendra Rao Juluri, Kjeld Pedersen, Vladimir Popok

Research output: Contribution to journalJournal articleResearchpeer-review

5 Citations (Scopus)

Abstract

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping
eliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.
Original languageEnglish
Article number1700190
JournalPhysica Status Solidi. A: Applications and Materials Science
Volume214
Issue number10
Number of pages7
ISSN0031-8965
DOIs
Publication statusPublished - Jul 2017

Fingerprint

Vapor phase epitaxy
Buffer layers
vapor phase epitaxy
Heterojunctions
Substitution reactions
templates
Metals
substitutes
Atoms
Defects
Substrates
Carbon Monoxide
Epitaxial growth
metals
Surface morphology
atoms
Seed
Gases
Crystalline materials
Transmission electron microscopy

Keywords

  • epitaxy, topochemical, Gallium Nitride

Cite this

Rozhavskaia, Mariia M. ; Kukushkin, Sergey A. ; Osipov, Andrey ; Myasoedov, Alexandr V. ; Troshkov, Sergey I. ; Sorokin, Lev M. ; Brunkov, Pavel N. ; Baklanov, Alexandr V. ; Telyatnik, Rodion S. ; Juluri, Raghavendra Rao ; Pedersen, Kjeld ; Popok, Vladimir. / Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution. In: Physica Status Solidi. A: Applications and Materials Science . 2017 ; Vol. 214, No. 10.
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abstract = "We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si dopingeliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.",
keywords = "epitaxy, topochemical, Gallium Nitride",
author = "Rozhavskaia, {Mariia M.} and Kukushkin, {Sergey A.} and Andrey Osipov and Myasoedov, {Alexandr V.} and Troshkov, {Sergey I.} and Sorokin, {Lev M.} and Brunkov, {Pavel N.} and Baklanov, {Alexandr V.} and Telyatnik, {Rodion S.} and Juluri, {Raghavendra Rao} and Kjeld Pedersen and Vladimir Popok",
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language = "English",
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Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution. / Rozhavskaia, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey; Myasoedov, Alexandr V.; Troshkov, Sergey I.; Sorokin, Lev M.; Brunkov, Pavel N.; Baklanov, Alexandr V.; Telyatnik, Rodion S.; Juluri, Raghavendra Rao; Pedersen, Kjeld; Popok, Vladimir.

In: Physica Status Solidi. A: Applications and Materials Science , Vol. 214, No. 10, 1700190, 07.2017.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

AU - Rozhavskaia, Mariia M.

AU - Kukushkin, Sergey A.

AU - Osipov, Andrey

AU - Myasoedov, Alexandr V.

AU - Troshkov, Sergey I.

AU - Sorokin, Lev M.

AU - Brunkov, Pavel N.

AU - Baklanov, Alexandr V.

AU - Telyatnik, Rodion S.

AU - Juluri, Raghavendra Rao

AU - Pedersen, Kjeld

AU - Popok, Vladimir

PY - 2017/7

Y1 - 2017/7

N2 - We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si dopingeliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.

AB - We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si dopingeliminates these defects in the case of growth on SiC templates with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy.

KW - epitaxy, topochemical, Gallium Nitride

U2 - 10.1002/pssa.201700190

DO - 10.1002/pssa.201700190

M3 - Journal article

VL - 214

JO - Physica Status Solidi. A: Applications and Materials Science

JF - Physica Status Solidi. A: Applications and Materials Science

SN - 1862-6300

IS - 10

M1 - 1700190

ER -