Abstract
The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.
Original language | English |
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Article number | 8616890 |
Journal | IEEE Transactions on Power Electronics |
Volume | 34 |
Issue number | 10 |
Pages (from-to) | 9698-9708 |
Number of pages | 11 |
ISSN | 0885-8993 |
DOIs | |
Publication status | Published - Oct 2019 |
Keywords
- Electrothermal simulation
- Multichip modules
- Power MOSFETs
- Predictive models
- Reliability
- Silicon carbide