Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Lorenzo Ceccarelli*, Ramchandra M. Kotecha, Amir Sajjad Bahman, Francesco Iannuzzo, Homer Alan Mantooth

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

16 Citations (Scopus)
230 Downloads (Pure)

Abstract

The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.
Original languageEnglish
Article number8616890
JournalIEEE Transactions on Power Electronics
Volume34
Issue number10
Pages (from-to)9698-9708
Number of pages11
ISSN0885-8993
DOIs
Publication statusPublished - Oct 2019

Keywords

  • Electrothermal simulation
  • Multichip modules
  • Power MOSFETs
  • Predictive models
  • Reliability
  • Silicon carbide

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