Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers

Hongbo Zhao; Dipen Narendra Dalal; Xiongfei Wang; Jannick Kjær Jørgensen; Christian Uhrenfeldt; Szymon Michal Beczkowski; Stig Munk-Nielsen

doi:10.1109/IECON.2019.8926673

Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers

Hongbo Zhao, Dipen Narendra Dalal, Xiongfei Wang, Jannick Kjær Jørgensen, Christian Uhrenfeldt, Szymon Michal Beczkowski, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

21 Citations (Scopus)

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Abstract

This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.

Original language	English
Title of host publication	Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
Number of pages	7
Place of Publication	Lisbon, Portugal
Publisher	IEEE Press
Publication date	Oct 2019
DOIs	https://doi.org/10.1109/IECON.2019.8926673
Publication status	Published - Oct 2019
Event	IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society - Lisbon, Portugal Duration: 14 Oct 2019 → 17 Oct 2019

Conference

Conference	IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
Country/Territory	Portugal
City	Lisbon
Period	14/10/2019 → 17/10/2019

Series	Proceedings of the Annual Conference of the IEEE Industrial Electronics Society
ISSN	1553-572X

Keywords

Common-mode capacitance
SiC MOSFETs gate drivers
Lumped circuit-based physics-level model
Turn-to-core capacitance

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10.1109/IECON.2019.8926673

final_IECON_mod3Accepted author manuscript, 544 KB

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Zhao, H., Dalal, D. N., Wang, X., Jørgensen, J. K., Uhrenfeldt, C., Beczkowski, S. M., & Munk-Nielsen, S. (2019). Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. In Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society IEEE Press. https://doi.org/10.1109/IECON.2019.8926673

Zhao, Hongbo ; Dalal, Dipen Narendra ; Wang, Xiongfei et al. / Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. Lisbon, Portugal : IEEE Press, 2019. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

@inproceedings{f5ccdc05c88e4f0c90787d8d193f276d,

title = "Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers",

abstract = "This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.",

keywords = "Common-mode capacitance, SiC MOSFETs gate drivers, Lumped circuit-based physics-level model, Turn-to-core capacitance",

author = "Hongbo Zhao and Dalal, {Dipen Narendra} and Xiongfei Wang and J{\o}rgensen, {Jannick Kj{\ae}r} and Christian Uhrenfeldt and Beczkowski, {Szymon Michal} and Stig Munk-Nielsen",

year = "2019",

month = oct,

doi = "10.1109/IECON.2019.8926673",

language = "English",

series = "Proceedings of the Annual Conference of the IEEE Industrial Electronics Society",

publisher = "IEEE Press",

booktitle = "Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society",

note = "IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, IECON 2019 ; Conference date: 14-10-2019 Through 17-10-2019",

}

Zhao, H, Dalal, DN, Wang, X , Jørgensen, JK, Uhrenfeldt, C, Beczkowski, SM & Munk-Nielsen, S 2019, Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. in Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. IEEE Press, Lisbon, Portugal, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, 14/10/2019. https://doi.org/10.1109/IECON.2019.8926673

Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. / Zhao, Hongbo; Dalal, Dipen Narendra; Wang, Xiongfei et al.
Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. Lisbon, Portugal: IEEE Press, 2019. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers

AU - Zhao, Hongbo

AU - Dalal, Dipen Narendra

AU - Wang, Xiongfei

AU - Jørgensen, Jannick Kjær

AU - Uhrenfeldt, Christian

AU - Beczkowski, Szymon Michal

AU - Munk-Nielsen, Stig

PY - 2019/10

Y1 - 2019/10

N2 - This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.

AB - This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.

KW - Common-mode capacitance

KW - SiC MOSFETs gate drivers

KW - Lumped circuit-based physics-level model

KW - Turn-to-core capacitance

U2 - 10.1109/IECON.2019.8926673

DO - 10.1109/IECON.2019.8926673

M3 - Article in proceeding

T3 - Proceedings of the Annual Conference of the IEEE Industrial Electronics Society

BT - Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society

PB - IEEE Press

CY - Lisbon, Portugal

T2 - IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society

Y2 - 14 October 2019 through 17 October 2019

ER -

Zhao H, Dalal DN, Wang X , Jørgensen JK, Uhrenfeldt C, Beczkowski SM et al. Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. In Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. Lisbon, Portugal: IEEE Press. 2019. (Proceedings of the Annual Conference of the IEEE Industrial Electronics Society). doi: 10.1109/IECON.2019.8926673

Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers

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