Abstract
In this study, a physics-based compact model for high-speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of a high-speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, the double-pulse switching tests for a commercial field stop IGBT and a light punch-through carrier-stored trench bipolar transistor are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.
Original language | English |
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Journal | IEEE Transactions on Power Electronics |
Volume | 32 |
Issue number | 4 |
Pages (from-to) | 3075-3087 |
Number of pages | 13 |
ISSN | 1941-0107 |
DOIs | |
Publication status | Published - 2017 |
Externally published | Yes |
Keywords
- buffer layers
- insulated gate bipolar transistors
- semiconductor device models
- inductive switching characteristics
- high-speed buffer layer IGBT
- insulated gate bipolar transistor
- ambipolar diffusion equation
- excess carrier transport
- excess carrier redistribution
- excess carrier recombination
- double-pulse switching tests
- light punch-through carrier-stored trench bipolar transistor
- Insulated gate bipolar transistors
- Buffer layers
- Capacitance
- Mathematical model
- Integrated circuits
- Switches
- Logic gates
- Field stop (FS) IGBT
- insulated gate bipolar transistor (IGBT)
- light punch-through (LPT)
- carrier-stored trench bipolar transistor (CSTBT)
- physics-based IGBT model
- power semiconductor modeling