@article{deeb5043c6924376b9021329932f9a04,
title = "Modeling of igbt with high bipolar gain for mitigating gate voltage oscillations during short circuit",
keywords = "Insulated gate bipolar transistors, Oscillators, Logic gates, Inductance, Integrated circuit modeling, Doping, Capacitance, Insulated gate bipolar transistor, bipolar gain, short circuit, gate oscillations, parametric oscillation, robustness, Kirk Effect, TCAD, Bipolar gain, Gate oscillations, Insulated gate bipolar transistor, Kirk effect, Parametric oscillation, Robustness, Short circuit, Technology computer-aided design (TCAD), robustness, parametric oscillation, insulated gate bipolar transistor, technology computer-Aided design (TCAD), short circuit, gate oscillations",
author = "Reigosa, {Paula Diaz} and Francesco Iannuzzo and Chiara Corvasce and Munaf Rahimo",
year = "2019",
month = sep,
doi = "10.1109/JESTPE.2019.2913044",
language = "English",
volume = "7",
pages = "1584 -- 1592",
journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",
issn = "2168-6777",
publisher = "IEEE",
number = "3",
}