Abstract
In this paper, the impact of the p-n-p bipolar transistor gain on the short-circuit behavior of high-voltage trench insulated-gate bipolar transistors (IGBTs) is analyzed. The short-circuit ruggedness against high-frequency oscillations is strongly improved by increasing the hole current supplied by the collector. By doing so, the electric field at the emitter of the IGBT is increased and less influenced by the amount of the excess charge (i.e., the electric field is fixed). The charge-field interactions during the short circuit event, leading to periodic charge storage and charge removal effect and provoking miller capacitance variations, can be mitigated. The effectiveness of using IGBTs with a high bipolar gain is validated through both simulations and experiments, also a design rule to tradeoff the IGBT’s losses and short-circuit robustness is provided.
Original language | English |
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Article number | 8698267 |
Journal | IEEE Journal of Emerging and Selected Topics in Power Electronics |
Volume | 7 |
Issue number | 3 |
Pages (from-to) | 1584 - 1592 |
Number of pages | 9 |
ISSN | 2168-6777 |
DOIs | |
Publication status | Published - Sept 2019 |
Keywords
- Bipolar gain
- Gate oscillations
- Insulated gate bipolar transistor
- Kirk effect
- Parametric oscillation
- Robustness
- Short circuit
- Technology computer-aided design (TCAD)
- robustness
- parametric oscillation
- insulated gate bipolar transistor
- technology computer-Aided design (TCAD)
- short circuit
- gate oscillations