Modeling of igbt with high bipolar gain for mitigating gate voltage oscillations during short circuit

Paula Diaz Reigosa, Francesco Iannuzzo, Chiara Corvasce, Munaf Rahimo

Research output: Contribution to journalJournal articleResearchpeer-review

1 Citation (Scopus)
38 Downloads (Pure)
Original languageEnglish
Article number8698267
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume7
Issue number3
Pages (from-to)1584 - 1592
Number of pages9
ISSN2168-6777
DOIs
Publication statusPublished - Sep 2019

Keywords

  • Bipolar gain
  • Gate oscillations
  • Insulated gate bipolar transistor
  • Kirk effect
  • Parametric oscillation
  • Robustness
  • Short circuit
  • Technology computer-aided design (TCAD)
  • robustness
  • parametric oscillation
  • insulated gate bipolar transistor
  • technology computer-Aided design (TCAD)
  • short circuit
  • gate oscillations

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