Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

Shivakumar D. Thammaiah, John Lundsgaard Hansen, Lis Karen Nanver

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Abstract

Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2019, CSTIC 2019
EditorsCor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
PublisherIEEE
Publication date18 Mar 2019
Article number8755633
ISBN (Print)978-1-5386-7444-4
ISBN (Electronic)978-1-5386-7443-7
DOIs
Publication statusPublished - 18 Mar 2019
EventChina Semiconductor Technology International Conference - Shanghai, China
Duration: 18 Mar 201919 Mar 2019

Conference

ConferenceChina Semiconductor Technology International Conference
CountryChina
CityShanghai
Period18/03/201919/03/2019

Keywords

  • Aluminum
  • Chemical vapor deposition
  • Diffusion barrier
  • Diodes
  • Gallium nitride
  • Molecular beam epitaxy
  • Pure boron

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