New layout concepts in MW-scale IGBT modules for higher robustness during normal and abnormal operations

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

10 Citations (Scopus)

Abstract

This paper presents six different layout designs for MW-level Insulated-Gate Bipolar Transistor (IGBT) modules. The aim is to optimize the normal switching and abnormal short circuit performances of IGBT modules in terms of stray inductance reduction and inductance coupling cancellation. Using the Finite-Element-Method AnSYS Q3D Extractor, electromagnetic simulations are conducted to extract the self and mutual inductance from the six different layouts. PSpice simulations are used to reveal that the stray parameters inside the module play an important role under normal and abnormal operations, and thus the best performing layout strategies can be selected. The prototypes are fabricated to validate the results of the Q3D simulation analysis, in which the self-inductance is measured by using a high precision impedance analyzer.
Original languageEnglish
Title of host publicationProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages8
Place of PublicationLong Beach
PublisherIEEE Press
Publication dateMar 2016
Pages288 - 294
ISBN (Print)978-1-4673-8393-6, 978-1-4673-9551-9
ISBN (Electronic)978-1-4673-9550-2
DOIs
Publication statusPublished - Mar 2016
Event2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, United States
Duration: 20 Mar 201624 Mar 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Conference

Conference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LocationLong Beach Convention and Entertainment Center
Country/TerritoryUnited States
CityLong Beach
Period20/03/201624/03/2016
Internet address

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