Abstract
We consider a Stark Hamiltonian on a two-dimensional bounded domain with Dirichlet boundary conditions. In the strong electric field limit we derive, under certain local convexity conditions, a three-term asymptotic expansion of the low-lying eigenvalues. This shows that the excitation frequencies are proportional to the square root of the boundary curvature at a certain point determined by the direction of the electric field.
Original language | English |
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Journal | SIAM Journal on Mathematical Analysis |
Volume | 54 |
Issue number | 2 |
Pages (from-to) | 2114-2127 |
Number of pages | 14 |
ISSN | 0036-1410 |
DOIs | |
Publication status | Published - 2022 |
Bibliographical note
Publisher Copyright:© 2022 Society for Industrial and Applied Mathematics.
Keywords
- asymptotics of eigenvalues
- confined semiconductor device
- Stark effect
- strong electric field