Optical characterization of SiC films grown on Si(111)

Raghavendra Rao Juluri, John Lundsgaard Hansen, Peter Kjær Kristensen, Brian Julsgaard, Kjeld Pedersen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.
Original languageEnglish
Article number230
JournalApplied Physics B
Volume124
Issue number12
ISSN0946-2171
DOIs
Publication statusPublished - 2018

Cite this

Juluri, Raghavendra Rao ; Hansen, John Lundsgaard ; Kristensen, Peter Kjær ; Julsgaard, Brian ; Pedersen, Kjeld. / Optical characterization of SiC films grown on Si(111). In: Applied Physics B. 2018 ; Vol. 124, No. 12.
@article{717d7cdfc402400f8548cdbd3660e4e9,
title = "Optical characterization of SiC films grown on Si(111)",
abstract = "Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.",
author = "Juluri, {Raghavendra Rao} and Hansen, {John Lundsgaard} and Kristensen, {Peter Kj{\ae}r} and Brian Julsgaard and Kjeld Pedersen",
year = "2018",
doi = "10.1007/s00340-018-7103-x",
language = "English",
volume = "124",
journal = "Applied Physics B",
issn = "0946-2171",
publisher = "Physica-Verlag",
number = "12",

}

Optical characterization of SiC films grown on Si(111). / Juluri, Raghavendra Rao; Hansen, John Lundsgaard; Kristensen, Peter Kjær; Julsgaard, Brian; Pedersen, Kjeld.

In: Applied Physics B, Vol. 124, No. 12, 230, 2018.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Optical characterization of SiC films grown on Si(111)

AU - Juluri, Raghavendra Rao

AU - Hansen, John Lundsgaard

AU - Kristensen, Peter Kjær

AU - Julsgaard, Brian

AU - Pedersen, Kjeld

PY - 2018

Y1 - 2018

N2 - Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.

AB - Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.

UR - http://www.scopus.com/inward/record.url?scp=85056633161&partnerID=8YFLogxK

U2 - 10.1007/s00340-018-7103-x

DO - 10.1007/s00340-018-7103-x

M3 - Journal article

VL - 124

JO - Applied Physics B

JF - Applied Physics B

SN - 0946-2171

IS - 12

M1 - 230

ER -