Paramagnetic Defects in Modified Carbon-Containing Semiconductors

I.I. Azarko, I.P. Kozlov, E.I. Kozlova, Vladimir Popok

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Abstract

Ion implanted polymers and diamonds and pyrolysed polymers were studied using the standard method of electron spin resonance. For all investigated diamonds and carbon-containing semiconductors the ESR signal with g-value of 2.0025–2.0027 was found. It was estimated that ion implantation and thermal treatment each bring similar changes to the parameters of this signal. The corresponding paramagnetic centres are caused by the low dimensional carbon-rich clusters or conglomerates composed of the mostly sp2-hybridised carbon atoms with delocalised π-electrons that bring the main contribution into the conduction processes which are realised in the diamonds and carbon-containing materials modified by implantation or pyrolysis.
Original languageEnglish
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
Pages (from-to)1116-1120
Number of pages5
ISSN0168-583X
Publication statusPublished - Jan 1999
Externally publishedYes

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