Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Mauro Valente, Francesco Iannuzzo, Yongheng Yang, Emre Gurpinar

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)
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Abstract

Nowadays, the power electronics converter design is challenged with a request of high efficiency and compactness for various applications. To tackle this, the research community and the industry have almost fully exploited the silicon technology, leading to the development of new power transistors. The Gallium-Nitride (GaN) HEMTs can be promising power devices to replace the traditional power devices. Therefore, the performances of GaN-based converters should be assessed to validate the effectiveness in terms of efficiency and power density. Moreover, among the available converter topologies, the performance of the three-level Neutral Point Clamped (NPC) family can be enhanced with the GaN HEMTs. In light of the above, in this paper, the performance of a GaN-based three-level Active NPC (3L-ANPC) converter is evaluated in terms of power losses, volume impact of passive components, and output distortions. Simulations and experiments have been performed.
Original languageEnglish
Title of host publicationProceedings of 2018 IEEE 4th Southern Power Electronics Conference (SPEC)
Number of pages8
PublisherIEEE Press
Publication dateDec 2018
ISBN (Electronic)978-1-5386-8257-9
DOIs
Publication statusPublished - Dec 2018
Event4th IEEE Southern Power Electronics Conference, SPEC 2018 - Singapore, Singapore
Duration: 10 Dec 201813 Dec 2018

Conference

Conference4th IEEE Southern Power Electronics Conference, SPEC 2018
CountrySingapore
CitySingapore
Period10/12/201813/12/2018

Keywords

  • Gallium Nitride (GaN)
  • gaN HEMT
  • Photovoltaic (PV) systems
  • Reliability
  • Three-level active neutral point clamped (3L-ANPC) converter
  • Wide-band gap (WBG) devices

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