Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit

Sungyoung Song; Stig Munk-Nielsen; Christian Uhrenfeldt; Ionut Trintis

doi:10.1109/IECON.2016.7793191

Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit

Sungyoung Song, Stig Munk-Nielsen, Christian Uhrenfeldt, Ionut Trintis

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

4 Citations (Scopus)

Abstract

There have been various technical developments of commercial gallium nitride on silicon power devices over the last couple of years since the initial appearance. Efforts have been made to increase threshold voltage and power density, while reducing stray impedance to improve the efficiency of the power conversion systems. In this paper, seven types of gallium nitride-on-silicon discrete power devices on the market are electrically analyzed and compared in the same test environment. To objectively understand the performance of power semiconductor devices, the figure of merit is derived from the measurements to enable a quantitative comparison. The results demonstrate that the power density of the current commercially available gallium nitride power components already goes beyond the theoretical limitation of the silicon material. Moreover, switching capability of commercial gallium nitride-on-silicon devices are found to be fourteen-times-better than that of a state-of-the-art silicon device from the same category.

Original language	English
Title of host publication	Proceedings of the IECON 2016 - 42nd Annual Conference of the Industrial Electronics Society
Number of pages	6
Publisher	IEEE Computer Society Press
Publication date	Oct 2016
Pages	1143-1148
Article number	7793191
ISBN (Electronic)	978-1-5090-3474-1
DOIs	https://doi.org/10.1109/IECON.2016.7793191
Publication status	Published - Oct 2016
Event	42nd Conference of the Industrial Electronics Society, IECON 2016: 42nd Annual Conference of the IEEE Industrial Electronics Society - Palazzo dei Congressi, Florence, Italy Duration: 24 Oct 2016 → 27 Oct 2016 http://www.iecon2016.org/?jjj=1471434927195 http://www.iecon2016.org/

Conference

Conference	42nd Conference of the Industrial Electronics Society, IECON 2016
Location	Palazzo dei Congressi
Country/Territory	Italy
City	Florence
Period	24/10/2016 → 27/10/2016
Sponsor	IEEE Industrial Electronics Society (IES), Institute of Electrical and Electronics Engineers (IEEE)
Internet address	http://www.iecon2016.org/?jjj=1471434927195 http://www.iecon2016.org/

Keywords

Commercial GaN-on-Si discrete devices
Electric characteristics
Figure of Merit
FOM
Gallium nitride
GaN-on-Si
Performance assessement
Power density
Switching capability
Wide band gap

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10.1109/IECON.2016.7793191

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Song, S., Munk-Nielsen, S., Uhrenfeldt, C., & Trintis, I. (2016). Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit. In Proceedings of the IECON 2016 - 42nd Annual Conference of the Industrial Electronics Society (pp. 1143-1148). Article 7793191 IEEE Computer Society Press. https://doi.org/10.1109/IECON.2016.7793191

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abstract = "There have been various technical developments of commercial gallium nitride on silicon power devices over the last couple of years since the initial appearance. Efforts have been made to increase threshold voltage and power density, while reducing stray impedance to improve the efficiency of the power conversion systems. In this paper, seven types of gallium nitride-on-silicon discrete power devices on the market are electrically analyzed and compared in the same test environment. To objectively understand the performance of power semiconductor devices, the figure of merit is derived from the measurements to enable a quantitative comparison. The results demonstrate that the power density of the current commercially available gallium nitride power components already goes beyond the theoretical limitation of the silicon material. Moreover, switching capability of commercial gallium nitride-on-silicon devices are found to be fourteen-times-better than that of a state-of-the-art silicon device from the same category.",

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author = "Sungyoung Song and Stig Munk-Nielsen and Christian Uhrenfeldt and Ionut Trintis",

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Song, S, Munk-Nielsen, S, Uhrenfeldt, C & Trintis, I 2016, Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit. in Proceedings of the IECON 2016 - 42nd Annual Conference of the Industrial Electronics Society., 7793191, IEEE Computer Society Press, pp. 1143-1148, 42nd Conference of the Industrial Electronics Society, IECON 2016, Florence, Italy, 24/10/2016. https://doi.org/10.1109/IECON.2016.7793191

Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit. / Song, Sungyoung; Munk-Nielsen, Stig; Uhrenfeldt, Christian et al.
Proceedings of the IECON 2016 - 42nd Annual Conference of the Industrial Electronics Society. IEEE Computer Society Press, 2016. p. 1143-1148 7793191.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit

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Keywords

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