Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si

Ana G. Silva, Kjeld Pedersen, Zheshen S. Li, Per Morgen

    Research output: Contribution to journalJournal articleResearchpeer-review

    3 Citations (Scopus)
    Original languageEnglish
    JournalApplied Surface Science
    Volume353
    Pages (from-to)1208-1213
    ISSN0169-4332
    DOIs
    Publication statusPublished - 4 Jul 2015

    Cite this

    @article{ebead86b780c434cb7c8410042456583,
    title = "Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si",
    author = "Silva, {Ana G.} and Kjeld Pedersen and Li, {Zheshen S.} and Per Morgen",
    year = "2015",
    month = "7",
    day = "4",
    doi = "10.1016/j.apsusc.2015.07.024",
    language = "English",
    volume = "353",
    pages = "1208--1213",
    journal = "Applied Surface Science",
    issn = "0169-4332",
    publisher = "Elsevier",

    }

    Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si. / Silva, Ana G. ; Pedersen, Kjeld; Li, Zheshen S. ; Morgen, Per.

    In: Applied Surface Science, Vol. 353, 04.07.2015, p. 1208-1213.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si

    AU - Silva, Ana G.

    AU - Pedersen, Kjeld

    AU - Li, Zheshen S.

    AU - Morgen, Per

    PY - 2015/7/4

    Y1 - 2015/7/4

    U2 - 10.1016/j.apsusc.2015.07.024

    DO - 10.1016/j.apsusc.2015.07.024

    M3 - Journal article

    VL - 353

    SP - 1208

    EP - 1213

    JO - Applied Surface Science

    JF - Applied Surface Science

    SN - 0169-4332

    ER -