POWER MODULE WITH REDUCED TRIPLE POINT MAXIMUM ELECTRIC FIELD

The present invention provides a power module, especially configured for Medium Voltage (MV) applications. The power module comprises an electrically non- conductive substrate with first and second electrically conductive pads connected to respective external terminals. The first conductive pad is configured for connection to an electric high voltage (HV) potential, such as in the MV range, e.g. 15 kV, and the second conductive pad is configured for connection to electric ground. A semiconductor chip, such as a Silicon Carbide based chip, is directly secured to the first or the second conductive pad. At least a first electrically conductive guard structure is arranged on the upper surface of the non-conductive substrate so as to form a closed ring around the first conductive pad. This first guard structure is configured for electric connection to an electrical potential between electric ground and the HV potential, such as an electric potential of at least 0.5 times the HV potential, such as 0.7-0.9 times the HV potential. Preferred embodiments illustrate how a voltage divider structure can be integrated into the power module to provide the optimal electric potential for the guard structure to give optimal reduction of maximum electric field in the trench.