Abstract
This paper presents the use of a kelvin-emitter resistor as a junction temperature sensor in IGBTs. The kelvin-emitter resistor is placed directly on the IGBT die surface. The resistance is then evaluated using a sensing current injected between the power-emitter and kelvin-emitter terminals. The kelvin-emitter resistor is part of the overall gate resistance of the IGBT. Due to the resistor design, the temperature measured is a local temperature that correlates with the top of the resistor.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
| Number of pages | 8 |
| Publisher | IEEE Signal Processing Society |
| Publication date | Sept 2019 |
| Article number | 8914963 |
| ISBN (Electronic) | 978-9-0758-1531-3 |
| DOIs | |
| Publication status | Published - Sept 2019 |
| Event | 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019 |
Conference
| Conference | 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe |
|---|---|
| Country/Territory | Italy |
| City | Genova |
| Period | 03/09/2019 → 05/09/2019 |
Keywords
- IGBT
- MOSFET
- Reliability
- Semiconductor Devicc
- Thermal design