Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs

Nick Baker; Laurent Dupont; Szymon Michal Beczkowski; Francesco Iannuzzo

doi:10.1109/TCPMT.2024.3370951

Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs

Nick Baker, Laurent Dupont, Szymon Michal Beczkowski, Francesco Iannuzzo

Research output: Contribution to journal › Journal article › Research › peer-review

5 Citations (Scopus)

Abstract

This paper presents the use of an on-chip Kelvin-Emitter Resistor to monitor the junction temperature of an IGBT during converter operation. The Kelvin-Emitter Resistor is manufactured using a 250μm Aluminium Nitride substrate with a Platinum resistive trace. The resistor is mounted directly on the Emitter surface metallization using conductive epoxy and is evaluated by injecting a small sensing current between the Power-Emitter and Kelvin-Emitter terminals during the on-state of a 600V/75A IGBT. The IGBT is operated in a single-phase inverter and the measured temperature is compared to measurements made using an optical fibre, an Infra-Red Camera, and the V_CE(T) method.

Original language	English
Article number	10453237
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	14
Issue number	12
Number of pages	8
ISSN	2156-3950
DOIs	https://doi.org/10.1109/TCPMT.2024.3370951
Publication status	Published - 28 Feb 2024

Bibliographical note

Publisher Copyright:
IEEE

Keywords

Current measurement
Logic gates
Resistors
Semiconductor device measurement
Temperature measurement
Temperature sensors
Voltage measurement

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10.1109/TCPMT.2024.3370951

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title = "Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs",

abstract = "This paper presents the use of an on-chip Kelvin-Emitter Resistor to monitor the junction temperature of an IGBT during converter operation. The Kelvin-Emitter Resistor is manufactured using a 250μm Aluminium Nitride substrate with a Platinum resistive trace. The resistor is mounted directly on the Emitter surface metallization using conductive epoxy and is evaluated by injecting a small sensing current between the Power-Emitter and Kelvin-Emitter terminals during the on-state of a 600V/75A IGBT. The IGBT is operated in a single-phase inverter and the measured temperature is compared to measurements made using an optical fibre, an Infra-Red Camera, and the VCE(T) method.",

keywords = "Current measurement, Logic gates, Resistors, Semiconductor device measurement, Temperature measurement, Temperature sensors, Voltage measurement",

author = "Nick Baker and Laurent Dupont and Beczkowski, {Szymon Michal} and Francesco Iannuzzo",

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language = "English",

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Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs. / Baker, Nick; Dupont, Laurent; Beczkowski, Szymon Michal et al.
In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 14, No. 12, 10453237, 28.02.2024.

Research output: Contribution to journal › Journal article › Research › peer-review

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T1 - Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs

AU - Baker, Nick

AU - Dupont, Laurent

AU - Beczkowski, Szymon Michal

AU - Iannuzzo, Francesco

N1 - Publisher Copyright: IEEE

PY - 2024/2/28

Y1 - 2024/2/28

N2 - This paper presents the use of an on-chip Kelvin-Emitter Resistor to monitor the junction temperature of an IGBT during converter operation. The Kelvin-Emitter Resistor is manufactured using a 250μm Aluminium Nitride substrate with a Platinum resistive trace. The resistor is mounted directly on the Emitter surface metallization using conductive epoxy and is evaluated by injecting a small sensing current between the Power-Emitter and Kelvin-Emitter terminals during the on-state of a 600V/75A IGBT. The IGBT is operated in a single-phase inverter and the measured temperature is compared to measurements made using an optical fibre, an Infra-Red Camera, and the VCE(T) method.

AB - This paper presents the use of an on-chip Kelvin-Emitter Resistor to monitor the junction temperature of an IGBT during converter operation. The Kelvin-Emitter Resistor is manufactured using a 250μm Aluminium Nitride substrate with a Platinum resistive trace. The resistor is mounted directly on the Emitter surface metallization using conductive epoxy and is evaluated by injecting a small sensing current between the Power-Emitter and Kelvin-Emitter terminals during the on-state of a 600V/75A IGBT. The IGBT is operated in a single-phase inverter and the measured temperature is compared to measurements made using an optical fibre, an Infra-Red Camera, and the VCE(T) method.

KW - Current measurement

KW - Logic gates

KW - Resistors

KW - Semiconductor device measurement

KW - Temperature measurement

KW - Temperature sensors

KW - Voltage measurement

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DO - 10.1109/TCPMT.2024.3370951

M3 - Journal article

AN - SCOPUS:85187011017

SN - 2156-3950

VL - 14

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 12

M1 - 10453237

ER -

Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs

Abstract

Bibliographical note

Keywords

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