PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

Lorenzo Ceccarelli; Francesco Iannuzzo; Muhammad Nawaz

doi:10.1109/ECCE.2016.7855369

PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

Lorenzo Ceccarelli, Francesco Iannuzzo, Muhammad Nawaz

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

15 Citations (Scopus)

1848 Downloads (Pure)

Abstract

The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

Original language	English
Title of host publication	Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016
Number of pages	8
Publisher	IEEE Press
Publication date	Sept 2016
ISBN (Electronic)	978-1-5090-0737-0
DOIs	https://doi.org/10.1109/ECCE.2016.7855369
Publication status	Published - Sept 2016
Event	8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, United States Duration: 18 Sept 2016 → 22 Sept 2016 http://www.ieee-ecce.org/

Conference

Conference	8th Annual IEEE Energy Conversion Congress & Exposition
Country/Territory	United States
City	Milwaukee, WI
Period	18/09/2016 → 22/09/2016
Sponsor	IEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS)
Internet address	http://www.ieee-ecce.org/

Keywords

PSpice
Modeling and simulation
SiC MOSFET
Wide band gap devices
Parameter identification

Access to Document

10.1109/ECCE.2016.7855369

PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental ValidationSubmitted manuscript, 1.15 MB
EC-0083_PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental ValidationAccepted author manuscript, 996 KB

AUB Link

Search for the material in Aalborg University Library's search engine

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

Cite this

@inproceedings{9c1f691a602940c69feb5293c4ef4416,

title = "PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation",

abstract = "The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.",

keywords = "PSpice, Modeling and simulation, SiC MOSFET, Wide band gap devices, Parameter identification",

author = "Lorenzo Ceccarelli and Francesco Iannuzzo and Muhammad Nawaz",

year = "2016",

month = sep,

doi = "10.1109/ECCE.2016.7855369",

language = "English",

booktitle = "Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016",

publisher = "IEEE Press",

note = " 8th Annual IEEE Energy Conversion Congress & Exposition : ECCE 2016, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

url = "http://www.ieee-ecce.org/",

}

Ceccarelli, L, Iannuzzo, F & Nawaz, M 2016, PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation. in Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016. IEEE Press, 8th Annual IEEE Energy Conversion Congress & Exposition, Milwaukee, WI, United States, 18/09/2016. https://doi.org/10.1109/ECCE.2016.7855369

PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation. / Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad.
Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016. IEEE Press, 2016.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Nawaz, Muhammad

PY - 2016/9

Y1 - 2016/9

N2 - The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

AB - The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

KW - PSpice

KW - Modeling and simulation

KW - SiC MOSFET

KW - Wide band gap devices

KW - Parameter identification

U2 - 10.1109/ECCE.2016.7855369

DO - 10.1109/ECCE.2016.7855369

M3 - Article in proceeding

BT - Proceedings of 8th IEEE Energy Conversion Congress and Exposition, 2016: ECCE 2016

PB - IEEE Press

T2 - 8th Annual IEEE Energy Conversion Congress & Exposition

Y2 - 18 September 2016 through 22 September 2016

ER -

PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

Abstract

Conference

Keywords

Access to Document

AUB Link

Fingerprint

Projects

Center Of Reliable Power Electronics (CORPE)

Cite this