Abstract
With fast switching wide band-gap semiconductors conquering high-power application, zerovoltage switching (ZVS) topologies are crucial to
increase converter efficiency by minimizing switching
losses. However, ZVS criteria cannot always be fulfilled
in the entire operating range of the converter. In this
case, the converter enters incomplete ZVS (iZVS).
The losses during iZVS cannot be quantified using conventional double-pulse tests, but require calorimetric
measurement setups, and separation of turn-on, conduction, and turn-off losses. This can be obtained for
discrete devices, but is not possible for power modules.
In this paper, a method to estimate the switching losses
during iZVS using equivalent hard-switching losses
is presented and experimentally verified, allowing to
quantify the losses in power modules.
increase converter efficiency by minimizing switching
losses. However, ZVS criteria cannot always be fulfilled
in the entire operating range of the converter. In this
case, the converter enters incomplete ZVS (iZVS).
The losses during iZVS cannot be quantified using conventional double-pulse tests, but require calorimetric
measurement setups, and separation of turn-on, conduction, and turn-off losses. This can be obtained for
discrete devices, but is not possible for power modules.
In this paper, a method to estimate the switching losses
during iZVS using equivalent hard-switching losses
is presented and experimentally verified, allowing to
quantify the losses in power modules.
| Original language | English |
|---|---|
| Publication status | Published - 2025 |
Keywords
- Incomplete ZVS
- loss modelling
- switching losses
- power modules
- power MOSFET
- Zero-voltage switching (ZVS)