Abstract
The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging properties of the devices. The results of each reliability stress are utilized not only for mutual comparison of SiC-based power commercial modules, but also as a tool to understand the underlying physical mechanisms of degradation. Towards this goal, the devices were placed under accelerate stress conditions, such as: high electric field, high temperature and high humidity. Finally, a preliminary judgment is performed on each kind of stress, based on the quality assessment of the semiconductor as well as the packaging material.
Original language | English |
---|---|
Title of host publication | Proceedings of IEEE Energy Conversion Congress and Exposition 2016 (ECCE) |
Number of pages | 8 |
Publisher | IEEE Press |
Publication date | Sept 2016 |
ISBN (Electronic) | 978-1-5090-0737-0 |
DOIs | |
Publication status | Published - Sept 2016 |
Event | 8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, United States Duration: 18 Sept 2016 → 22 Sept 2016 http://www.ieee-ecce.org/ |
Conference
Conference | 8th Annual IEEE Energy Conversion Congress & Exposition |
---|---|
Country/Territory | United States |
City | Milwaukee, WI |
Period | 18/09/2016 → 22/09/2016 |
Sponsor | IEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS) |
Internet address |
Keywords
- Power Modules
- Device Reliability
- 4H-SiC MOSFETs
- Semiconductor Devices
- Wide bandgap devices