Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

Vasilios Dimitris Karaventzas, Muhammad Nawaz, Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

8 Citations (Scopus)

Abstract

The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging properties of the devices. The results of each reliability stress are utilized not only for mutual comparison of SiC-based power commercial modules, but also as a tool to understand the underlying physical mechanisms of degradation. Towards this goal, the devices were placed under accelerate stress conditions, such as: high electric field, high temperature and high humidity. Finally, a preliminary judgment is performed on each kind of stress, based on the quality assessment of the semiconductor as well as the packaging material.
Original languageEnglish
Title of host publicationProceedings of IEEE Energy Conversion Congress and Exposition 2016 (ECCE)
Number of pages8
PublisherIEEE Press
Publication dateSept 2016
ISBN (Electronic)978-1-5090-0737-0
DOIs
Publication statusPublished - Sept 2016
Event 8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, United States
Duration: 18 Sept 201622 Sept 2016
http://www.ieee-ecce.org/

Conference

Conference 8th Annual IEEE Energy Conversion Congress & Exposition
Country/TerritoryUnited States
CityMilwaukee, WI
Period18/09/201622/09/2016
SponsorIEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS)
Internet address

Keywords

  • Power Modules
  • Device Reliability
  • 4H-SiC MOSFETs
  • Semiconductor Devices
  • Wide bandgap devices

Fingerprint

Dive into the research topics of 'Reliability Assessment of SiC Power MOSFETs From The End User's Perspective'. Together they form a unique fingerprint.

Cite this