Abstract
A gated probe for scanning tunneling microscopy (STM) has been developed. The probe extends normal STM operations by means of an additional electrode fabricated next to the tunneling tip. The extra electrode does not make contact with the sample and can be used as a gate. We report on the recipe used for fabricating the tunneling tip and the gate electrode on a silicon nitride cantilever. We demonstrate the functioning of the scanning gate probes by performing single-electron tunneling spectroscopy on 20-nm-gold clusters for different gate voltages.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 3 |
Pages (from-to) | 384-386 |
Number of pages | 3 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 17 Jan 2000 |