Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Peng Xue*, Francesco Iannuzzo

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

1 Citation (Scopus)
Original languageEnglish
JournalIEEE Transactions on Power Electronics
Volume37
Issue number5
Pages (from-to)5491-5500
Number of pages10
ISSN0885-8993
DOIs
Publication statusPublished - 1 May 2022

Bibliographical note

Publisher Copyright:
© 1986-2012 IEEE.

Keywords

  • Gallium nitride (GaN)
  • gallium nitride (GaN) cascode high electron mobility transistors (HEMTs)
  • self-sustained oscillation
  • turn-off oscillation

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