Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules

Haoze Luo; Francesco Iannuzzo; Frede Blaabjerg; Wuhua Li; Xiangning He

doi:10.1109/IECON.2017.8216259

Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules

Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg, Wuhua Li, Xiangning He

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

14 Citations (Scopus)

Abstract

In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.

Original language	English
Title of host publication	Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Number of pages	6
Publisher	IEEE Press
Publication date	Oct 2017
Pages	1525-1530
ISBN (Electronic)	978-1-5386-1127-2
DOIs	https://doi.org/10.1109/IECON.2017.8216259
Publication status	Published - Oct 2017
Event	43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, China Duration: 29 Oct 2017 → 1 Nov 2017

Conference

Conference	43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Country/Territory	China
City	Beijing
Period	29/10/2017 → 01/11/2017
Sponsor	Chinese Association of Automation (CAA), Chinese Power Supply Society, et al., IEEE Industrial Electronics Society (IES), Systems Engineering Society of China, The Institute of Electrical and Electronics Engineers (IEEE)

Keywords

Silicon carbide
Power MOSFET
Power cycling test
Separation Test
Bond wire
Failure mechanism

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10.1109/IECON.2017.8216259

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@inproceedings{b963024c597a4bd0858274d9e015c816,

title = "Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules",

abstract = "In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.",

keywords = "Silicon carbide, Power MOSFET, Power cycling test, Separation Test, Bond wire, Failure mechanism",

author = "Haoze Luo and Francesco Iannuzzo and Frede Blaabjerg and Wuhua Li and Xiangning He",

year = "2017",

month = oct,

doi = "10.1109/IECON.2017.8216259",

language = "English",

pages = "1525--1530",

booktitle = "Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017",

publisher = "IEEE Press",

note = "43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 ; Conference date: 29-10-2017 Through 01-11-2017",

}

Luo, H, Iannuzzo, F , Blaabjerg, F, Li, W & He, X 2017, Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules. in Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, pp. 1525-1530, 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017, Beijing, China, 29/10/2017. https://doi.org/10.1109/IECON.2017.8216259

Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules. / Luo, Haoze; Iannuzzo, Francesco ; Blaabjerg, Frede et al.
Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, 2017. p. 1525-1530.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules

AU - Luo, Haoze

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

AU - Li, Wuhua

AU - He, Xiangning

PY - 2017/10

Y1 - 2017/10

N2 - In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.

AB - In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.

KW - Silicon carbide

KW - Power MOSFET

KW - Power cycling test

KW - Separation Test

KW - Bond wire

KW - Failure mechanism

U2 - 10.1109/IECON.2017.8216259

DO - 10.1109/IECON.2017.8216259

M3 - Article in proceeding

SP - 1525

EP - 1530

BT - Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017

PB - IEEE Press

T2 - 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017

Y2 - 29 October 2017 through 1 November 2017

ER -

Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules

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