Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Link Voltage 50%
• Power Device 50%
• Junction Temperature 50%
• Pulse Length Increase 50%
• Melting Temperature 50%
• Channel Region 50%
• Transients 50%
• Scanning Electron Microscope 50%
• Thermal Simulation 50%

Keyphrases

• Circuit Degradation 100%
• Metalization 100%
• Initial Degradation 50%
• Contact Interface 50%